參數(shù)資料
型號(hào)： GP400DDS18
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 功率晶體管
英文描述： Dual Switch IGBT Module Preliminary Information
中文描述： 400 A, 1800 V, N-CHANNEL IGBT
文件頁(yè)數(shù)： 8/10頁(yè)
文件大小： 100K
代理商： GP400DDS18
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
7/10
Fig.9 Typical turn-off energy vs collector current
Fig.10 Typical turn-off energy vs collector current
Fig.11 Typical diode reverse recovery charge vs collector current
Fig.12 Typical switching characteristics
0
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70
80
90
0
100
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300
400
500
600
700
800
Collector current, IC - (A)
T
urn-of
fenergy
,E
of
f-
(mJ)
A : Rg = 15
B : Rg = 10
C : Rg = 5
A
B
C
Conditions:
Tcase = 25C,
VCE = 600V,
VGE = ±15V
0
25
50
75
100
125
0
50
100
150
200
250
300
350
400
Collector current, IC - (A)
T
urn-of
fenergy
,E
of
f-
(mJ)
A : Rg = 15
B : Rg = 10
C : Rg = 5
A
B
C
Conditions:
Tcase = 125C,
VCE = 600V,
VGE = ±15V
0
5
10
15
20
25
30
35
0
100
200
300
400
Collector current, IC (A)
Diode
turn-of
fenergy
,E
of
f(Diode)
-
(mJ)
Conditions:
VCE = 600V,
VGE = 15V,
Rg = 5
Tcase = 25C
Tcase = 125C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
0
50
100
150
200
250
300
350
400
Collector currrent, IC - (A)
Switching
times,
t
s-
(ns)
td(off)
td(on)
tf
tr
Conditions:
Tcase = 125C,
VCE = 600V
VGE = 15V
Rg = 5
相關(guān)PDF資料
PDF描述
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GP400DDM12 Dual Switch IGBT Module Advance Information
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