參數(shù)資料
型號(hào)： GP400DDS18
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 功率晶體管
英文描述： Dual Switch IGBT Module Preliminary Information
中文描述： 400 A, 1800 V, N-CHANNEL IGBT
文件頁(yè)數(shù)： 10/10頁(yè)
文件大?。?/td> 100K
代理商： GP400DDS18
GP400DDS12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
9/10
PACKAGE DETAILS
For further package information, please contact your local Customer Service Centre. All dimensions in mm, unless stated
otherwise. DO NOT SCALE.
140
31.5
4x M8
28
5
38
6x M4
18
26
13
11.5
35
14
20
43.3
11.85
57
65
6x 7
62
15
62
15
13
24
16
1
3
2
4
12
11
10
7
6
5
8
9
Nominal weight: 1600g
Module outline type code: D
ASSOCIATED PUBLICATIONS
Title
Application Note
Number
Electrostatic handling precautions
AN4502
An introduction to IGBTs
AN4503
IGBT ratings and characteristics
AN4504
Heatsink requirements for IGBT modules
AN4505
Calculating the junction temperature of power semiconductors
AN4506
Gate drive considerations to maximise IGBT efficiency
AN4507
Parallel operation of IGBTs – punch through vs non-punch through characteristics
AN4508
Guidance notes for formulating technical enquiries
AN4869
Principle of rating parallel connected IGBT modules
AN5000
Short circuit withstand capability in IGBTs
AN5167
Driving high power IGBTs with concept gate drivers
AN5190
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GP400DDM12 Dual Switch IGBT Module Advance Information
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