參數(shù)資料
型號： GP250MHB06S
廠商： DYNEX SEMICONDUCTOR LTD
元件分類： 功率晶體管
英文描述： Half Bridge IGBT Module
中文描述： 350 A, 600 V, N-CHANNEL IGBT
文件頁數(shù)： 2/10頁
文件大小： 127K
代理商： GP250MHB06S
GP250MHB06S
2/10
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
THERMAL AND MECHANICAL RATINGS
Symbol
Conditions
DC junction to case per arm
o
C/kW
100
Max.
-
Min.
Parameter
Units
R
th(j-c)
Thermal resistance - transistor
T
stg
Storage temperature range
Transistor
o
C
150
125
-
- 40
R
th(c-h)
Thermal resistance - Case to heatsink
(per module)
Mounting torque 5Nm (with mounting grease)
15
-
-
Mounting - M6
Nm
5
-
-
o
C/kW
T
j
Junction temperature
o
C
Screw torque
Diode
o
C
125
-
Electrical connections - M6
Nm
5
-
Thermal resistance - diode
DC junction to case
o
C/kW
250
-
-
R
th(j-c)
V
CES
Collector-emitter voltage
-
DC, T
case
= 25C
1ms, T
case
= 25C
350
A
Test Conditions
Symbol
I
C
Gate-emitter voltage
V
GE
= 0V
600
Units
V
±
20
700
Max.
Parameter
Collector current
1250
Maximum power dissipation
P
max
Commoned terminals to base plate.
AC RMS, 1 min, 50Hz
Isolation voltage
V
isol
V
2500
V
V
GES
A
I
C(PK)
W
(Transistor)
DC, T
case
= 75C
250
A
1ms, T
case
= 75C
A
500
ABSOLUTE MAXIMUM RATINGS - PER ARM
Stresses above those listed under 'Absolute Maximum Ratings' may cause permanent damage to the device. In extreme
conditions, as with all semiconductors, this may include potentially hazardous rupture of the package. Appropriate safety precautions
should always be followed. Exposure to Absolute Maximum Ratings may affect device reliability.
T
case
= 25C unless stated otherwise
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