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參數(shù)資料
| 型號： | GP1201FSS18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Single Switch Low V IGBT Module |
| 中文描述： | 1200 A, 1800 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 5/9頁 |
| 文件大?。?/td> | 127K |
| 代理商： | GP1201FSS18 |
GP1201FSS18
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
5/9
www.dynexsemi.com
TYPICAL CHARACTERISTICS
Fig. 3 Typical output characteristics
Fig. 4 Typical output characteristics
Fig. 5 Typical switching energy vs collector current
Fig. 6 Typical switching energy vs gate resistance
0
0
1.0
2.0
3.0
4.0
5.0
Collector-emitter voltage, V
ce
- (V)
C
c
V
ge
= 20/15/12/10V
Commo
n emitter
T
case
= 25
C
200
400
600
800
1000
1200
1400
2000
2200
2400
1800
1600
0
0
1.0
2.0
3.0
4.0
5.0
6.0
Collector-emitter voltage, V
ce
- (V)
C
c
V
ge
= 20/15/12/10V
Common emitter
T
case
= 125
C
200
400
600
800
1000
1200
1400
2000
2200
2400
1800
1600
0
800
200
400
Collector current, I
C
- (A)
0
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
E
T
case
= 125
C
V
GE
= 15V
V
CE
= 900V
R
G
= 2.2
L
= 50n
H
0.2
0.1
0.3
0.4
600
1200
1000
E
REC
E
ON
E
OFF
0
4
1
2
Gate resistance, R
G
- (Ohms)
0
2.4
2.8
3.2
E
T
case
= 125
C
V
GE
= 15V
V
CE
= 900V
I
L = 50nH
0.8
0.4
1.2
2.0
1.6
3
8
5
6
7
10
9
E
REC
E
OFF
E
ON
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