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參數(shù)資料
| 型號： | GP1201FSS18 |
| 廠商： | DYNEX SEMICONDUCTOR LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Single Switch Low V IGBT Module |
| 中文描述： | 1200 A, 1800 V, N-CHANNEL IGBT |
| 文件頁數(shù)： | 4/9頁 |
| 文件大小： | 127K |
| 代理商： | GP1201FSS18 |
GP1201FSS18
4/9
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
www.dynexsemi.com
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
1250
250
1000
400
400
700
350
-
-
Typ.
1050
180
850
300
250
500
250
500
180
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1200A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 50nH
I
F
= 1200A, V
R
= 50% V
CES
,
dI
F
/dt = 4500A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
ELECTRICAL CHARACTERISTICS
T
case
= 25C unless stated otherwise
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
T
case
= 125C unless stated otherwise
Units
ns
ns
mJ
ns
ns
mJ
μ
C
A
mJ
Max.
1350
350
1350
550
450
900
550
-
-
Typ.
1150
200
1150
400
300
700
425
600
250
Min.
-
-
-
-
-
-
-
-
-
Test Conditions
I
C
= 1200A
V
GE
=
±
15V
V
CE
= 900V
R
G(ON)
= R
G(OFF)
= 2.2
L ~ 50nH
I
F
= 1200A, V
R
= 50% V
CES
,
dI
F
/dt = 4000A/
μ
s
Parameter
Turn-off delay time
Fall time
Turn-off energy loss
Turn-on delay time
Rise time
Turn-on energy loss
Diode reverse recovery charge
Diode reverse current
Diode reverse recovery energy
Symbol
t
d(off)
t
f
E
OFF
t
d(on)
t
r
E
ON
Q
rr
I
rr
E
REC
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