參數(shù)資料
型號： GM72V66841ET-7K
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述： 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝： 0.400 INCH, TSOP2-54
文件頁數(shù)： 33/57頁
文件大?。?/td> 592K
代理商： GM72V66841ET-7K
LG Semicon
GM72V66841CT/CLT
Write Command to Precharge Command
Interval (same bank):
When the Precharge
command is executed for the same bank as the
write command that preceded it, the minimum
interval between the two commands is 1 cycle.
However, if the burst write operation is
unfinished, the input data must be masked by
means of DQM, DQMU/DQML for assurance of
the cycle defined by
t
RWL
.
Burst Length = 4 ( To stop write operation)
32
Command
DQM,
DQMU/DQML
Din
t
RWL
WRIT
PRE/PALL
CLK
in A0
in A1
t
RWL
PRE/PALL
WRIT
Command
DQM,
DQMU/DQML
Din
CLK
Burst Length = 4 (To write all data)
CLK
Din
t
RWL
in A0
in A1
in A2
in A3
DQM,
DQMU/DQML
WRIT
PRE/PALL
Command
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相關代理商/技術參數(shù)
參數(shù)描述
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