參數(shù)資料
型號: GM72V66841ET-7K
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, TSOP2-54
文件頁數(shù): 23/57頁
文件大?。?/td> 592K
代理商: GM72V66841ET-7K
LG Semicon
GM72V66841CT/CLT
Full-page Burst Stop
Burst stop command during burst read:
The
burst stop (BST) command is used to stop data
output during a full-page burst. The BST
command sets the output buffer to High-Z and
stops the full-page burst read.
The timing from command input to the last data
changes depending on the CAS latency setting. In
addition, the BST command is valid only during
full-page burst mode, and is invalid with burst
lengths 1, 2, 4, and 8.
BST to valid data
2
3
1
2
CAS Latency
BST to high impedance
2
3
BST
CLK
DQ(output)
out
out
out
out
Command
l
BSR
= 1
cycle
CAS Latency=2, Burst Length = full page
out
l
BSH
= 2 cycle
out
22
BST
CLK
DQ(output)
out
out
out
out
Command
CAS Latency = 3, Burst Length = full page
out
l
BSR
= 2
cycle
l
BSH
= 3 cycle
out
out
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