參數(shù)資料
型號(hào): GM72V66841ELT-7J
廠商: HYNIX SEMICONDUCTOR INC
元件分類: DRAM
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝: 0.400 INCH, TSOP2-54
文件頁(yè)數(shù): 55/57頁(yè)
文件大小: 592K
代理商: GM72V66841ELT-7J
LG Semicon
Power Down Mode
GM72V66841CT/CLT
CKE
CS
RAS
CAS
WE
A12/A13(BS)
Address
DQ(input)
Precharge Command
if needed
A10=1
CLK
DQM ,
DQMU/DQML
R:a
DQ(output)
CKE Low
Power Down Entry
t
RP
Power Down
Mode Exit
Active Bank 0
High-Z
54
Power Down
Cycle
RAS-CAS Delay=3
CAS Latency=3
Burst Length=4
= VIH or VIL
相關(guān)PDF資料
PDF描述
GM72V66841ELT-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-8 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841Exx 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GM72V66841ELT-7K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-8 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-75 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM