參數(shù)資料
型號(hào)： GM72V66841ELT-7J
廠商： HYNIX SEMICONDUCTOR INC
元件分類： DRAM
英文描述： 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述： 8M X 8 SYNCHRONOUS DRAM, 6 ns, PDSO54
封裝： 0.400 INCH, TSOP2-54
文件頁(yè)數(shù)： 40/57頁(yè)
文件大?。?/td> 592K
代理商： GM72V66841ELT-7J
LG Semicon
GM72V66841CT/CLT
39
Notes : 1. I
CC
depends on output load condition when the device is selected. I
CC (
max) is specified at the
output open condition.
2. One bank operation.
3. Addresses are changed once per one cycle.
4. Addresses are changed once per two cycles.
5. After Power down mode, CLK operating current.
6. After Power down mode, no CLK operating current.
7. After self refresh mode set, self refresh current.
8. L-Version.
9. Input signals are V
IH
or V
IL
fixed.
Capacitance
(Ta = 25C, V
CC
, V
CCQ
= 3.3 V +/- 0.3 V)
Input leakage current
I
LI
uA
0<=Vin <=V
CC
Output leakage current
I
LO
uA
0<=Vout <=V
CC
DQ = disable
Output high voltage
V
OH
V
I
OH
= -2 mA
Output low voltage
V
OL
V
I
OL
=2 mA
-1
1
-1.5
1.5
-
0.4
Parameter
Symbol
Unit
Test conditions
Notes
Min
Max
- 7K, -7J, -8, -10K
2.4
-
Notes : 1. Capacitance measured with Boonton Meter or effective capacitance measuring method.
2. DQM, DQMU/DQML = V
IH
to disable Dout.
3. This parameter is sampled and not 100% tested.
4. Measured with 1.4 V bias and 200mV swing at the pin under measurement.
Parameter
Input capacitance (CLK)
Input capacitance (Signals)
Output capacitance (DQ)
Symbol
C
I1
C
I2
C
O
Min.
2.5
2.5
4.0
Max.
4
5
6.5
Unit
pF
pF
pF
Notes
1, 3, 4
1, 3, 4
1, 2, 3, 4
相關(guān)PDF資料
PDF描述
GM72V66841ELT-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-8 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841Exx 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GM72V66841ELT-7K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-8 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-7 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET-75 制造商:未知廠家 制造商全稱:未知廠家 功能描述:x8 SDRAM
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