參數(shù)資料
型號: GM72V66841CT
廠商: Electronic Theatre Controls, Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個銀行同步動態(tài)RAM
文件頁數(shù): 41/57頁
文件大?。?/td> 592K
代理商: GM72V66841CT
LG Semicon
GM72V66841CT/CLT
40
AC Characteristics
(Ta = 0 to 70C, V
CC
, V
CCQ
= 3.3 V +/- 0.3 V, V
SS
, V
SSQ
= 0 V)
Symbol
Unit
Notes
t
CK
t
CK
t
CKH
t
CKL
t
AC
t
AC
t
OH
Parameter
System clock
cycle time
(CL=2)
(CL=3)
ns
- 8
Min
Max
8
-
12
-
- 10K
Min
Max
10
-
15
-
1
3
-
3
-
ns
1
CLK high pulse width
3
-
3
-
ns
1
CLK low pulse width
Access time
from CLK
(CL=2)
(CL=3)
ns
-
6
-
8
-
8
-
9
1, 2
3
-
3
-
ns
1, 2
Data-out hold time
CLK to Data-out low
impedance
CLK to Data-out
high impedance
( CL = 2,3 )
Data-in setup time
t
LZ
2
-
2
-
ns
1, 2, 3
t
HZ
ns
-
6
-
7
1, 4
t
DS
t
DH
t
AS
t
AH
t
CES
2
-
2
-
ns
1
1
-
1
-
ns
1
Data-in hold time
2
-
2
-
ns
1
Address setup time
1
-
1
-
ns
1
Address hold time
2
-
2
-
ns
1, 5
CKE setup time
CKE setup time for
power down exit
CKE hold time
t
CESP
2
-
2
-
ns
1
t
CEH
1
-
1
-
ns
1
t
CS
2
-
2
-
ns
1
Command (CS, RAS,
CAS, WE, DQM)
setup time
t
RC
72
-
90
-
ns
1
Ref/Active to Ref/Active
command period
Active to Precharge
command period
Active command to
column command
(same bank)
Precharge to active
command period
t
CH
1
-
1
-
ns
1
Command (CS, RAS,
CAS, WE, DQM)
hold time
t
RAS
48
120000
60
120000
ns
1
- 7K
Min
Max
t
RCD
24
-
30
-
ns
1
t
RP
24
-
30
-
ns
1
10
-
10
-
3
-
3
-
-
6
-
6
3
-
2
-
-
6
2
-
1
-
2
-
1
-
2
-
2
-
1
-
2
-
70
-
1
-
50
120000
20
-
20
-
- 7J
Min
Max
10
-
15
-
3
-
3
-
-
6
-
8
3
-
2
-
-
6
2
-
1
-
2
-
1
-
2
-
2
-
1
-
2
-
70
-
1
-
50
120000
20
-
20
-
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