參數(shù)資料
型號(hào): GM72V66841CT
廠商: Electronic Theatre Controls, Inc.
英文描述: 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述: 2097152字× 8位× 4個(gè)銀行同步動(dòng)態(tài)RAM
文件頁(yè)數(shù): 30/57頁(yè)
文件大小: 592K
代理商: GM72V66841CT
LG Semicon
GM72V66841CT/CLT
Write Command to Read Command Interval:
1.
Same bank, same Row address:
When the read
command is executed at the same ROW address of
the same bank as the preceding write command, the
write command can be performed after an interval
of no less than 1 cycle.
However, in the case of a burst write, data will
continue to be written until one cycle before the
read command is executed.
29
CLK
Command
WRITE to READ Command Interval (1)
Burst Write Mode
CAS Latency=2
Burst Length = 4
Bank0
WRIT
READ
Din
in A0
out B3
out B1
out B0
out B2
Dout
DQM,
DQMU/DQML
Column=A
Write
Column=B
Read
Column=B
Dout
CLK
Command
WRITE to READ Command Interval (2)
Burst Write Mode
CAS Latency=2
Burst Length = 4
Bank0
WRIT
Din
in A0
out B3
out B1
out B0
out B2
Dout
DQM,
DQMU/DQML
READ
Column=A
Write
Column=B
Read
Column=B
Dout
in A1
CAS Latency
CAS Latency