參數(shù)資料
型號(hào)： GM72V66841CT
廠商： Electronic Theatre Controls, Inc.
英文描述： 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述： 2097152字× 8位× 4個(gè)銀行同步動(dòng)態(tài)RAM
文件頁(yè)數(shù)： 24/57頁(yè)
文件大?。?/td> 592K
代理商： GM72V66841CT
LG Semicon
GM72V66841CT/CLT
CLK
DQ(output)
in
in
Command
l
BSW
= 0
cycle
Burst Length = full page
Burst stop command at burst write:
The burst
stop command (BST command) is used to stop
data input during a full-page burst write. No data
is written in the same cycle as the BST
command, and in subsequent cycles.
In addition, the BST command is only valid
during full-page burst mode, and is invalid with
burst lengths of 1, 2, 4, and 8. And an interval of
t
RWL
is required between the last data-in and the
next Precharge command.
BST
PRE/PALL
t
RWL
23
相關(guān)PDF資料
PDF描述
GM72V66841ELT-7J 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-8 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841Exx 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GM72V66841CT/CLT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx8|3.3V|4K|75|SDR SDRAM - 64M
GM72V66841ELT-10K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-75 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
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