參數(shù)資料
型號(hào)： GM72V66841CLT
廠(chǎng)商： Electronic Theatre Controls, Inc.
英文描述： 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述： 2097152字× 8位× 4個(gè)銀行同步動(dòng)態(tài)RAM
文件頁(yè)數(shù)： 43/57頁(yè)
文件大小： 592K
代理商： GM72V66841CLT
LG Semicon
GM72V66841CT/CLT
42
Relationship Between Frequency and Minimum Latency
Notes
- 8
l
RCD
1
Active command to column
command (same bank)
Active command to active
command (same bank)
Active command to Precharge
command (same bank)
Precharge command to active
command (same bank)
Write recovery or last data-in to
Precharge command
(same bank)
Active command to active
command (different bank)
Self refresh exit time
Last data in to active command
(Auto Precharge, same bank)
Self refresh exit to command
input
Precharge
command to
high impedance
Last data out to active
command
(auto Precharge) (same bank)
Last data out to
Precharge
(early Precharge)
Column command to column
command
Write command to data in
latency
DQM to data in
l
RC
= [
l
RAS
+
l
RP
], 1
l
RAS
- 10K
l
RP
1
l
RWL
1
l
RRD
1
l
SREX
l
APW
= [
l
RWL
+
l
RP
], 1
= [
l
RC
]
l
SEC
l
HZP
l
HZP
(CL=2)
(CL=3)
l
APR
l
EP
l
EP
(CL=2)
(CL=3)
l
CCD
l
WCD
l
DID
l
DOD
l
CLE
l
RSA
l
CDD
DQM to data out
125
3
9
6
8
3
2
2
1
5
9
-
3
1
-
-2
1
0
0
2
83
2
6
4
12
2
1
2
1
3
6
2
3
1
- 1
- 2
1
0
0
2
100
3
9
6
10
66
2
6
4
15
l
PEC
Power down exit to command
input
CKE to CLK disable
Register set to active command
1
1
1
1
1
1
0
0
3
1
2
1
4
9
-
3
1
-
-2
1
0
0
2
2
1
2
1
3
6
2
3
1
- 1
- 2
1
0
0
2
1
1
1
1
1
1
0
0
Parameter
t
CK
(ns)
frequency(MHz)
1
CS to command disable
Symbol
100
2
7
5
10
2
1
2
1
3
9
2
3
1
- 1
- 2
1
0
0
2
1
1
1
0
- 7K
- 7J
100
2
7
5
10
2
1
2
1
3
9
-
3
1
-
- 2
1
0
0
2
66
2
6
4
15
2
1
2
1
3
6
2
3
1
- 1
- 2
1
0
0
2
1
1
1
1
1
1
0
0
相關(guān)PDF資料
PDF描述
GM72V66841CT 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7J 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-8 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GM72V66841CT 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841CT/CLT 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:8Mx8|3.3V|4K|75|SDR SDRAM - 64M
GM72V66841ELT-10K 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7 制造商:HYNIX 制造商全稱(chēng):Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
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