參數(shù)資料
型號(hào)： GM72V66841CLT
廠商： Electronic Theatre Controls, Inc.
英文描述： 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
中文描述： 2097152字× 8位× 4個(gè)銀行同步動(dòng)態(tài)RAM
文件頁(yè)數(shù)： 27/57頁(yè)
文件大小： 592K
代理商： GM72V66841CLT
LG Semicon
GM72V66841CT/CLT
WRITE to WRITE Command Interval (same ROW address in same bank)
CLK
Command
Address
(A0-A11)
Din
Burst Write Mode
Burst Length = 4
Bank0
BS(A12/A13)
ACTV
WRIT
WRIT
in A0
in B0
in B1
in B2
in B3
Bank0
Active
Column=A
Write
Column=B
Write
Row
Column A
Column B
26
Command Intervals
Write command to Write command interval:
1. Same bank, same ROW address:
When another write command is executed at the
same ROW address of the same bank as the
preceding write command, the second write can
be performed after an interval of no less than 1
cycle.
In the case of burst writes, the second write
command has priority.
2. Same bank, different ROW address:
When the ROW address changes, consecutive
read commands cannot be executed; it is
necessary to separate the two write commands
with a Precharge command and a bank-active
command.
3. Different bank:
When the bank changes, the second write can be
performed after an interval of no less than 1
cycle, provided that the other bank is in the bank-
active state. In the case of burst write, the second
write command has priority.
相關(guān)PDF資料
PDF描述
GM72V66841CT 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7J 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7K 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-8 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ET 2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
GM72V66841CT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841CT/CLT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8Mx8|3.3V|4K|75|SDR SDRAM - 64M
GM72V66841ELT-10K 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
GM72V66841ELT-7 制造商:HYNIX 制造商全稱:Hynix Semiconductor 功能描述:2,097,152 WORD x 8 BIT x 4 BANK SYNCHRONOUS DYNAMIC RAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*