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參數(shù)資料
| 型號： | GFU30N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 43A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第43A條（?。﹟對251AA |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 68K |
| 代理商： | GFU30N03 |
GFU30N03
Vishay Semiconductor
www.vishay.com
2
Document Number 74573
17-Dec-01
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
30
–
–
V
Gate Threshold Voltage
V
GS(th)
1.0
–
3.0
V
Gate-Body Leakage
I
GSS
V
GS
= ±20V, V
DS
= 0V
–
–
±100
nA
Zero Gate Voltage Drain Current
On-State Drain Current
(1)
I
DSS
V
DS
= 30V, V
GS
= 0V
–
–
1
μ
A
I
D(on)
V
DS
≥
5V, V
GS
= 10V
40
–
–
A
Drain-Source On-State Resistance
(2)
R
DS(on)
V
GS
= 10V, I
D
= 20A
–
12.5
15
m
V
GS
= 4.5V, I
D
= 17A
–
17.5
21
Forward Transconductance
(1)
g
fs
V
DS
= 15V, I
D
= 20A
–
35
–
S
Dynamic
Total Gate Charge
Q
g
V
DS
=15V, V
GS
=5.0V, I
D
=20A
–
16
22
–
34
48
Gate-Source Charge
Q
gs
V
DS
= 15V, V
GS
= 10V
I
D
= 20A
–
5.7
–
nC
Gate-Drain Charge
Q
gd
–
4.7
–
Turn-On Delay Time
t
d(on)
–
10
20
Rise Time
t
r
V
DD
= 15V, R
L
= 15
I
D
1A, V
GEN
= 10V
R
G
= 6
–
9
18
ns
Turn-Off Delay Time
t
d(off)
–
47
75
Fall Time
t
f
–
13
26
Input Capacitance
C
iss
V
GS
= 0V
–
1850
–
Output Capacitance
C
oss
V
DS
= 15V
–
315
–
pF
Reverse Transfer Capacitance
C
rss
f = 1.0MH
Z
–
150
–
Source-Drain Diode
Max Diode Forward Current
Diode Forward Voltage
(1)
I
S
–
–
–
20
A
V
SD
I
S
= 20A, V
GS
= 0V
–
0.91
1.3
V
Note:
(1) Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%
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