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參數(shù)資料
| 型號(hào)： | GFU25N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 38A I(D) | TO-251AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直| 38A條（丁）|對(duì)251AA |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 38K |
| 代理商： | GFU25N03 |
GFU25N03
Vishay Semiconductor
www.vishay.com
2
Document Number 74572
17-Dec-01
Electrical Characteristics
(T
J
= 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
BV
DSS
V
GS
= 0V, I
D
= 250
μ
A
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= ±20V, V
DS
= 0V
30
–
–
V
Gate Threshold Voltage
V
GS(th)
0.8
–
2.5
±
100
V
Gate-Body Leakage
I
GSS
–
–
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24V, V
GS
= 0V
–
–
1
μ
A
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
–
–
10
On-State Drain Current
(1)
I
D(on)
V
DS
≥
5V, V
GS
= 10V
80
–
–
A
Drain-Source On-State Resistance
(1)
R
DS(on)
V
GS
= 10V, I
D
= 19A
–
12.5
16.5
m
V
GS
= 4.5V, I
D
= 15A
–
19
25
Forward Transconductance
(1)
g
fs
V
DS
= 5V, I
D
= 19A
–
25
–
S
Dynamic
Total Gate Charge
Q
g
V
DS
= 15V, V
GS
= 5V,I
D
= 19A
–
11
14
–
22
28
nC
Gate-Source Charge
Q
gs
V
DS
= 15V, I
D
= 19A
V
GS
= 10V
–
3.4
–
Gate-Drain Charge
Q
gd
–
3.4
–
Turn-On Delay Time
t
d(on)
–
10
18
Turn-On Rise Time
t
r
V
DD
= 15V, I
D
= 1A
–
14
25
Turn-Off Delay Time
t
d(off)
V
GEN
= 10V, R
G
= 6
–
38
60
ns
Turn-Off Fall Time
t
f
–
6
10
Input Capacitance
C
iss
V
DS
= 15V, V
GS
= 0V
f = 1.0MH
Z
–
1173
–
Output Capacitance
C
oss
–
199
–
pF
Reverse Transfer Capacitance
C
rss
–
112
–
Source-Drain Diode
Diode Forward Voltage
(1)
V
SD
I
S
= 19A, V
GS
= 0V
–
0.9
1.2
V
Continuous Source Current (Diode Conduction)
I
S
–
–
–
30
A
Notes:
(1) Pulse test; pulse width
≤
300
μ
s, duty cycle
≤
2%
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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