參數(shù)資料
型號: GFD35N03
英文描述: TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 53A I(D) | TO-252AA
中文描述: 晶體管| MOSFET的| N溝道| 30V的五(巴西)直|第53A條(?。﹟對252AA
文件頁數(shù): 4/4頁
文件大?。?/td> 59K
代理商: GFD35N03
GFD35N03
Vishay Semiconductor
www.vishay.com
4
Document Number 74558
20-Dec-01
Ratings and
Characteristic Curves
(T
A
= 25
°
C unless otherwise noted)
0
500
1000
1500
2000
2500
3000
3500
0
5
10
15
20
25
30
Fig. 8
Capacitance
C
iss
C
rss
C
oss
f = 1MH
Z
V
GS
= 0V
0
2
4
6
8
10
0
10
20
30
40
5
15
25
35
Fig. 7
Gate Charge
V
DS
= 15V
I
D
= 25A
1
0.1
0.01
10
100
0.2
0
0.4
0.6
0.8
1
1.2
1.4
T
J
= 125
°
C
Fig. 9
Source-Drain Diode
Forward Voltage
25
°
C
--55
°
C
V
GS
= 0V
I
S
V
SD
-- Source-to-Drain Voltage (V)
Q
g
-- Gate Charge (nC)
V
G
C
V
DS
-- Drain-to-Source Voltage (V)
Fig. 12
Maximum Safe Operating Area
0.0001
0.001
0.01
0.01
0.1
0.1
1
1
10
I
D
V
DS
-- Drain-Source Voltage (V)
Fig. 10
Thermal Impedance
R
θ
J
I
Pulse Duration (sec.)
0.001
0.0001
0.01
0.1
0
0.1
1
1
10
100
1000
10
100
200
400
600
800
1000
1
10
Fig. 11
Power vs. Pulse Duration
P
Pulse Duration (sec.)
Single Pulse
R
θ
JC
= 2.8
°
C/W
T
C
= 25
°
C
V
GS
= 10V
Single Pulse
R
θ
JC
= 2.8
°
C/W
T
C
= 25
°
C
R
DS(ON
Lmt
100
μ
s
1ms
10ms
DC
D = 0.5
0.2
0.1
t
1
t
2
P
DM
1. Duty Cycle, D = t
1
/t
2
2. R
θ
JC
(t) = R
θ
JC(norm)
*R
θ
JC
3. R
θ
JC
= 2.8
°
C/W
4. T
J
- T
C
= P
DM
* R
θ
JC
(t)
100ms
Single Pulse, 0.02, 0.05
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