
GFD55N03
Vishay Semiconductors
Document Number 74591
8-Jan-02
www.vishay.com
1
New Product
N-Channel Enhancement-Mode MOSFET
T
RENCH
G
EN
F
ET
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(3)
T
C
= 25°C
T
J
= 150°C
T
C
= 100°C
Pulsed Drain Current
(1)
Power Dissipation
T
C
= 25°C
T
J
= 150°C
T
C
= 100°C
T
A
= 25°C
(2)
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
(2)
Symbol
V
DS
V
GS
Limit
30
Unit
V
±
20
75
47
180
62.5
25.0
2.5
I
D
A
I
DM
P
D
W
T
J
, T
stg
R
θ
JC
R
θ
JA
–55 to 150
2.0
50
°C
°C/W
°C/W
Notes:
(1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1-in
2
2oz. Cu PCB (FR-4 material)
(3) Maximum DC current limited by the package
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
and motor drives
Fast Switching for High Efficiency
Mechanical Data
Case:
JEDEC TO-252 molded plastic body
Terminals:
Solder plated, solderable per
MIL-STD-750, Method 2026
High temperature soldering guaranteed:
250°C/10 seconds at terminals
Weight:
0.011oz., 0.4g
0.190
(4.826)
0.243
(6.172)
0.063
(1.6)
0.165
(4.191)
0.100
(2.54)
0.118
(3.0)
0.245 (6.22)
0.235 (5.97)
0.040 (1.02)
0.025 (0.64)
0.410 (10.41)
0.380 (9.65)
0.170 (4.32) min.
0.214 (5.44)
0.206 (5.23)
D
0.265 (6.73)
0.255 (6.48)
0.023 (0.58)
0.018 (0.46)
0.094 (2.39)
0.087 (2.21)
0.204 (5.18)
0.156 (3.96)
0.197 (5.00)
0.177 (4.49)
0.035 (0.89)
0.028 (0.71)
G
S
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.009 (0.23)
0.001 (0.03)
0.0min.
0.060 (1.52)
0.045 (1.14)
0.050 (1.27)
0.035 (0.89)
TO-252 (DPAK)
Dimensions in inches
and (millimeters)
Mounting Pad Layout
G
D
S
V
DS
30V
R
DS(ON)
7m
I
D
75A