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參數資料
| 型號： | GFD35N03 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 53A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 30V的五（巴西）直|第53A條（?。﹟對252AA |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 59K |
| 代理商： | GFD35N03 |
V
DS
30V
R
DS(ON)
10
m
I
D
53A
Maximum Ratings and Thermal Characteristics
(T
C
= 25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(3)
T
C
= 25
°
C
T
J
= 150
°
C
T
C
= 100
°
C
Pulsed Drain Current
(1)
Power Dissipation
T
C
= 25
°
C
T
J
= 150
°
C
T
C
= 100
°
C
T
A
= 25
°
C
(2)
Operating Junction and Storage Temperature Range
Junction-to-Case Thermal Resistance
Junction-to-Ambient Thermal Resistance
(2)
Symbol
V
DS
V
GS
Limit
30
Unit
V
±
20
53
33
150
45
18
2.5
I
D
A
I
DM
P
D
W
T
J
, T
stg
R
θ
JC
R
θ
JA
–
55 to 150
2.8
50
°
C
°
C/W
Notes:
(1) Pulse width limited by maximum junction temperature
(2) Surface mounted on a 1in
2
2oz. Cu PCB (FR-4 material)
(3) Maximum DC current limited by the package
0.245 (6.22)
0.235 (5.97)
0.040 (1.02)
0.025 (0.64)
0.410 (10.41)
0.380 (9.65)
0.170 (4.32) min.
0.214 (5.44)
0.206 (5.23)
D
0.265 (6.73)
0.255 (6.48)
0.023 (0.58)
0.018 (0.46)
0.094 (2.39)
0.087 (2.21)
0.204 (5.18)
0.156 (3.96)
0.197 (5.00)
0.177 (4.49)
0.035 (0.89)
0.028 (0.71)
G
S
0.023 (0.58)
0.018 (0.46)
0.045 (1.14)
0.035 (0.89)
0.009 (0.23)
0.001 (0.03)
0.0min.
0.060 (1.52)
0.045 (1.14)
0.050 (1.27)
0.035 (0.89)
Dimensions in inches
and (millimeters)
Mounting Pad Layout
T
RENCH
EN
F
ET
0.190
(4.826)
0.243
(6.172)
0.063
(1.6)
0.165
(4.191)
0.100
(2.54)
0.118
(3.0)
Features
Advanced Trench Process Technology
High Density Cell Design for Ultra Low On-Resistance
Specially Designed for Low Voltage DC/DC Converters
Fast Switching for High Efficiency
Mechanical Data
Case:
JEDEC TO-252 molded plastic body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
High temperature soldering guaranteed:
250
°
C/10 seconds at terminals
Weight:
0.011oz., 0.4g
GFD35N03
Vishay Semiconductor
Document Number 74558
20-Dec-01
www.vishay.com
1
New Product
N-Channel Enhancement-Mode MOSFET
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