參數(shù)資料
型號(hào): GFC654
英文描述: TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 3.6A I(D) | TSOP
中文描述: 晶體管| MOSFET的| P通道| 30V的五(巴西)直| 3.6AI(四)|的TSOP
文件頁(yè)數(shù): 2/4頁(yè)
文件大?。?/td> 75K
代理商: GFC654
GFC654
Vishay Semiconductor
www.vishay.com
2
Document Number 74553
5-Dec-01
Electrical Characteristics
(T
J
= 25
°
C unless otherwise noted)
Parameter
Static
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage
Symbol
Test Condition
Min
Typ
Max
Unit
BV
DSS
V
GS(th)
I
GSS
V
GS
= 0V, I
D
=
250
μ
A
V
DS
= V
GS
, I
D
=
250
μ
A
V
DS
= 0V, V
GS
=
±
20V
V
DS
=
24V, V
GS
= 0V
V
DS
=
20V, V
GS
=0V, T
J
=55
°
C
V
DS
=
5V, V
GS
=
4.5V
V
GS
=
10V, I
D
=
3.6A
30
1
5
55
75
86
3
V
V
nA
3
±
100
1.0
10.0
75
127
125
Zero Gate Voltage Drain Current
I
DSS
μ
A
On-State Drain Current
(1)
I
D(on)
A
Drain-Source On-State Resistance
(1)
R
DS(on)
T
J
= 125
°
C
m
V
GS
=
4.5V, I
D
=
2.7A
V
DS
=
10V, I
D
=
3.6A
Forward Transconductance
(1)
Dynamic
Total Gate Charge
(1)
Gate-Source Charge
(1)
Gate-Drain Charge
(1)
Turn-On Delay Time
(1)
Rise Time
(1)
Turn-Off Delay Time
(1)
Fall Time
(1)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Diode
Maximum Diode Forward Current
Maximum Pulsed Diode Forward Current
(2)
g
fs
S
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
V
DS
=
15V, V
GS
=
10V
I
D
=
3.6A
12.5
2.0
2.5
5
5.5
40
19
670
125
70
15
18
14
60
29
nC
V
DD
=
15V
I
D
1A, V
GEN
=
10V
R
G
= 6
ns
V
DS
=
15V, V
GS
= 0V
f = 1.0MH
Z
pF
I
S
I
SM
T
A
= 25
°
C
1.3
10
1.2
1
A
Diode Forward Voltage
(1)
V
SD
I
S
=
1.3A, V
GS
= 0V
0.85
0.64
V
T
J
= 125
°
C
Note:
(1) Pulse test, pulse width
300
μ
s, duty cycle
2%
(2) Pulse width limited by maximum junction temperature
G
D
S
V
IN
V
DD
V
GEN
R
G
R
D
V
OUT
DUT
Input, V
IN
t
d(on)
Output, V
OUT
t
on
t
r
t
d(off)
t
off
t
f
INVERTED
90%
10%
10%
90 %
50%
50%
10%
90%
PULSE WIDTH
Switching
Test Circuit
Switching
Waveforms
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