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參數(shù)資料
| 型號(hào)： | GFC654 |
| 英文描述： | TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 3.6A I(D) | TSOP |
| 中文描述： | 晶體管| MOSFET的| P通道| 30V的五（巴西）直| 3.6AI（四）|的TSOP |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 75K |
| 代理商： | GFC654 |
GFC654
Vishay Semiconductor
Document Number 74553
5-Dec-01
www.vishay.com
1
New Product
P-Channel Enhancement-Mode MOSFET
Features
Advanced trench process technology
High density cell design for ultra low on-resistance
Popular SOT-23-6L package with copper lead-frame for
superior thermal and electrical capabilities
Compact and low profile
Maximum Ratings and Thermal Characteristics
(T
A
= 25°C unless otherwise noted)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
–30
±
20
V
Gate-Source Voltage
Continuous Drain Current
(2)
T
J
= 150°C
Pulsed Drain Current
(1)
Power Dissipation
(2)
T
J
= 150°C
V
GS
T
A
= 25°C
T
A
= 70°C
I
D
–3.6
–2.9
A
I
DM
–10
T
A
= 25°C
T
A
= 70°C
P
D
2.0
1.3
W
Operating Junction and Storage Temperature Range
Junction-to-Ambient Thermal Resistance
(2)
T
J
, T
stg
–55 to 150
°C
R
θ
JA
62.5
°C/W
Notes:
(1) Pulse width limited by maximum junction temperature
(2) Surface mounted on FR4 board, t
≤
5 sec.
Mechanical Data
Case:
SOT-23-6L package
Terminals:
Leads solderable per MIL-STD-750,
Method 2026
Marking Code:
54
V
DS
–30V
R
DS(ON)
75
m
I
D
–3.6A
Mounting Pad Layout
Pin Configuration (Top View)
SOT-23-6L
T
RENCH
G
EN
F
ET
0.122 (3.10)
0.114 (2.90)
0.067 (1.70)
0.059 (1.50)
0.118 (3.00)
0.106 (2.70)
0.020 (0.50)
0.010 (0.25)
0.004 (0.10)
0.0005 (0.013)
0.075 (1.90)
0.008 (0.20)
0.004 (0.10)
10
°
Typical
0.039 (1.00)
0.036 (0.90)
0.037 (0.95)
Top View
Dimensions in inches
and (millimeters)
6
5
4
1
2
3
0.037 (0.95)
Ref.
0.074 (1.9)
Ref.
0.094 (2.4)
0.028 (0.7)
0.039
(1.07)
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