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參數(shù)資料
| 型號： | GE28F640W30T85 |
| 英文描述： | EEPROM|FLASH|4MX16|CMOS|BGA|56PIN|PLASTIC |
| 中文描述： | 的EEPROM | FLASH動畫| 4MX16 |的CMOS | BGA封裝| 56PIN |塑料 |
| 文件頁數(shù)： | 79/91頁 |
| 文件大?。?/td> | 994K |
| 代理商： | GE28F640W30T85 |
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1.8 Volt Intel
Wireless Flash Memory with 3 Volt I/O
Datasheet
79
2. Illegal commands are those not defined in the command set.
3. All partitions default to Read Array mode at power-up. A Read Array command issued to a busy partition
results in undermined data when a partition address is read.
4. Both cycles of 2 cycles commands should be issued to the same partition address. If they are issued to
different partitions, the second write determines the active partition. Both partitions will output status
information when read.
5. If the WSM is active, both cycles of a 2 cycle command are ignored. This differs from previous Intel devices.
6. The Clear Status command clears status register error bits except when the WSM is running (Pgm Busy,
Erase Busy, Pgm Busy In Erase Suspend, OTP Busy, EFP modes) or suspended (Erase Suspend, Pgm
Suspend, Pgm Suspend In Erase Suspend).
7. EFP writes are allowed only when status register bit SR.0 = 0. EFP is busy if Block Address = address at EFP
Confirm command. Any other commands are treated as data.
8. The "current state" is that of the WSM, not the partition.
9. Confirm commands (Lock Block, Unlock Block, Lock-down Block, Configuration Register) perform the
operation and then move to the Ready State.
10.In Erase suspend, the only valid two cycle commands are "Program Word", "Lock/Unlock/Lockdown Block",
and "CR Write". Both cycles of other two cycle commands ("OEM CAM program & confirm", "Program OTP &
confirm", "EFP Setup & confirm", "Erase setup & confirm") will be ignored. In Program suspend or Program
suspend in Erase suspend, both cycles of all two cycle commands will be ignored.
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| GE28F800B3BA90 | 制造商:Intel 功能描述:NOR Flash, 512K x 16, 45 Pin, Plastic, BGA |
| GE28F800B3TA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 Volt Advanced Boot Block Flash Memory |
| GE28F800C3BA70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BA90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
| GE28F800C3BC70 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:Advanced+ Boot Block Flash Memory (C3) |
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