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參數(shù)資料
| 型號： | GB15XP120KTPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 30 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 13 PIN, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 30 Amp |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 169K |
| 代理商： | GB15XP120KTPBF |
Document Number: 93913
Revision: 03-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
7
GB15XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
Diodes, 15 A
Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)
Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (Diode)
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
0.001
0.01
0.1
1
10
SINGLE PULSE
(THERMAL RESPONSE)
0.5
0.3
0.1
0.05
0.02
0.01
Ri (°C/W)
0.196
0.515
0.389
τ
i (sec)
0.000547
0.025615
0.037176
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
t1 , Rectangular Pulse Duration (sec)
T
)
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci=
τ
i
/
Ri
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
0.001
0.01
0.1
1
10
SINGLE PULSE
(THERMAL RESPONSE)
0.5
0.3
0.1
0.05
0.02
0.01
Ri (°C/W)
0.390
1.023
0.287
τ
i (sec)
0.001245
0.03327
0.052639
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + tc
t1 , Rectangular Pulse Duration (sec)
T
)
τ
J
τ
1
τ
1
τ
2
τ
2
τ
3
τ
3
R
1
R
1
R
2
R
2
R
3
R
3
Ci
i
/
Ri
Ci=
τ
i
/
Ri
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