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參數(shù)資料
| 型號： | GB15XP120KTPBF |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 30 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 13 PIN, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 30 Amp |
| 文件頁數(shù)： | 3/10頁 |
| 文件大?。?/td> | 169K |
| 代理商： | GB15XP120KTPBF |
Document Number: 93913
Revision: 03-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
3
GB15XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
Diodes, 15 A
Notes
(1)
T
0
, T
1
are thermistor′s temperatures
R
0
R
1
(2)
Fig. 1 - Typical Output Characteristics
T
J
= 25 °C
Fig. 2 - Typical Output Characteristics
T
J
= 125 °C
THERMISTOR SPECIFICATIONS (T CODE ONLY)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Resistance
R
0
(1)
T
0
= 25 °C
T
0
= 25 °C
T
1
= 85 °C
-
30
-
k
Sensitivity index of the
thermistor material
(1)(2)
-
4000
-
K
------
1
T
0
-----
1
T
1
-----
–
exp
=
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Operating junction
temperature range
T
J
- 40
-
150
°C
Storage temperature range
T
Stg
- 40
-
125
Junction to case
IGBT
R
thJC
-
-
1.1
°C/W
Diode
-
-
1.7
Module
-
0.50
-
Case to sink per module
R
thCS
Heatsink compound thermal conductivity = 1 W/mK
-
0.1
-
Mounting torque
-
-
4
Nm
Weight
-
65
-
g
0
2
4
6
0
20
40
60
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
Vce (V)
I
0
2
4
6
0
20
40
60
Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V
Vce (V)
I
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