參數(shù)資料
型號(hào): GB15XP120KTPBF
廠商: VISHAY SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: TRANSISTOR 30 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 13 PIN, Insulated Gate BIP Transistor
中文描述: IGBT Transistors 1200 Volt 30 Amp
文件頁數(shù): 5/10頁
文件大?。?/td> 169K
代理商: GB15XP120KTPBF
Document Number: 93913
Revision: 03-Aug-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
www.vishay.com
5
GB15XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
Diodes, 15 A
Fig. 9 - Typical Capacitance vs. V
CE
V
GE
= 0 V; f = 1 MHz
Fig. 10 - Typical Gate Charge vs. V
GE
I
CE
= 15 A
Fig. 11 - Maximum DC Collector Current vs.
Case Temperature
Fig. 12 - Power Dissipation vs. Case Temperature
(IGBT only)
Fig. 13 - Forward SOA
T
C
= 25 °C, T
J
150 °C
Fig. 14 - Reverse BIAS SOA
T
J
= 150 °C, V
GE
= 15 V
0
10
20
30
40
10
100
1000
10000
Vce (V)
C
Cies
Coes
Cres
Q
G
, Total Gate Charge (nC)
0
20
40
60
80
100
0
4
8
12
16
600V
V
G
0
40
80
120
160
0
8
16
24
32
I
Tc (°C)
0
40
80
120
160
0
30
60
90
120
Tc (°C)
P
1
10
100
1000
10000
0.01
0.1
1
10
100
Vce (V)
I
20 μs
100 μs
1 ms
DC
10 ms
10
100
1000
10000
1
10
100
Vce (V)
I
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