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參數(shù)資料
| 型號(hào)： | GB15XP120KTPBF |
| 廠(chǎng)商： | VISHAY SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | TRANSISTOR 30 A, 1200 V, N-CHANNEL IGBT, ROHS COMPLIANT, MTP, 13 PIN, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors 1200 Volt 30 Amp |
| 文件頁(yè)數(shù)： | 6/10頁(yè) |
| 文件大?。?/td> | 169K |
| 代理商： | GB15XP120KTPBF |
www.vishay.com
6
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com
,
DiodesAsia@vishay.com
,
DiodesEurope@vishay.com
Document Number: 93913
Revision: 03-Aug-10
GB15XP120KTPbF
Vishay Semiconductors
Three Phase Inverter Module in MTP Package
1200 V NPT IGBT and HEXFRED
Diodes, 15 A
Fig. 15 - Typical Transfer Characteristics
V
CE
= 50 V; t
p
= 10 μs
Fig. 16 - Typical Diode Forward Characteristics
t
p
= 80 μs
Fig. 17 - Typical Diode I
rr
vs. I
F
T
J
= 125 °C
Fig. 18 - Typical Diode I
rr
vs. R
g
T
J
= 125 °C; I
F
= 10 A
Fig. 19 - Typical Diode I
rr
vs. dI
F
/dt; V
CC
= 600 V;
V
GE
= 15 V; I
CE
= 10 A, T
J
= 125 °C
0
4
8
12
16
0
40
80
120
160
Vge (V)
I
Tj = 25°C
Tj = 125°C
0
1
2
3
4
0
10
20
30
40
50
Vf (V)
I
Tj = 25°C
Tj = 125°C
5
10
15
20
25
30
35
5
15
25
35
45
55
If (A)
I
Rg=4.7
Ω
Rg=
10
Ω
Rg=
22Ω
Rg=47
Ω
0
10
20
30
40
50
15
20
25
30
35
40
45
Rg ( )
I
400
550
700
850
1000
1150
1300
15
20
25
30
35
40
45
dif/dt (A/μs)
I
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