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參數(shù)資料
| 型號： | GA200SA60SP |
| 廠商： | VISHAY SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | TRANSISTOR 342 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| 中文描述： | IGBT Transistors N-Ch 600 Volt 100A |
| 文件頁數(shù)： | 9/9頁 |
| 文件大?。?/td> | 178K |
| 代理商： | GA200SA60SP |
Legal Disclaimer Notice
www.vishay.com
Vishay
Revision: 12-Mar-12
1
Document Number: 91000
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree
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damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to
obtain written terms and conditions regarding products designed for such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
Material Category Policy
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
相關(guān)PDF資料 |
PDF描述 |
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| GA200SA60UP | TRANSISTOR 200 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT PACKAGE-4, Insulated Gate BIP Transistor |
| GA37931 | SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
| GA39931 | SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
| GA40931 | SINGLE PHASE MOULDED BRIDGES 0,8 AMP TO 1,5 AMP |
| GA50TS120K | Short Circuit Rated Ultra-FastTM Speed IGBT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| GA200SA60SPBF | 制造商:Vishay Semiconductors 功能描述:IGBT SOT-227 TUBE 10 |
| GA200SA60U | 功能描述:IGBT UFAST 600V 100A SOT227 RoHS:否 類別:半導體模塊 >> IGBT 系列:- 標準包裝:10 系列:GenX3™ IGBT 類型:PT 配置:單一 電壓 - 集電極發(fā)射極擊穿（最大）:600V Vge, Ic時的最大Vce（開）:1.4V @ 15V，100A 電流 - 集電極 (Ic)（最大）:430A 電流 - 集電極截止（最大）:100µA Vce 時的輸入電容 (Cies):31nF @ 25V 功率 - 最大:1000W 輸入:標準 NTC 熱敏電阻:無 安裝類型:底座安裝 封裝/外殼:SOT-227-4，miniBLOC 供應商設(shè)備封裝:SOT-227B |
| GA200SA60UP | 制造商:Vishay Angstrohm 功能描述:Trans IGBT Chip N-CH 600V 200A 4-Pin SOT-227 制造商:Vishay Semiconductors 功能描述:SINGLE IGBT 600V 200A 制造商:Vishay Semiconductors 功能描述:SINGLE IGBT, 600V, 200A 制造商:Vishay Intertechnologies 功能描述:Transistor IGBT N-Ch 600V 200A SOT227 |
| GA200SA60UPBF | 制造商:Vishay Semiconductors 功能描述:IGBT SOT-227 TUBE 10 |
| GA200TD120U | 制造商:International Rectifier 功能描述: |
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