參數(shù)資料
型號(hào)： FZ1200R33KF2-B5
廠商： EUPEC
英文描述： Hochstzulassige Werte / Maximum rated values
中文描述： Hochstzulassige話高潮/最大額定值
文件頁數(shù)： 2/9頁
文件大?。?/td> 164K
代理商： FZ1200R33KF2-B5
Technische Information / Technical Information
FZ 1200 R 33 KL2
IGBT-Module
IGBT-Modules
vorlufiges Datenblatt
preliminary datasheet
Charakteristische Werte / Characteristic values
Transistor / Transistor
min.
typ.
max.
Einschaltverzgerungszeit (ind. Last)
turn on delay time (inductive load)
I
C
= 1200 A, V
CC
= 1800V
V
GE
= ±15V, R
G
= 2,7 , C
GE
= 330nF, T
vj
= 25°C
t
d,on
-
700
ns
V
GE
= ±15V, R
G
= 2,7 , C
GE
= 330nF,T
vj
= 125°C
-
700
ns
Anstiegszeit (induktive Last)
rise time (inductive load)
I
C
= 1200 A, V
CC
= 1800V
V
GE
= ±15V, R
G
= 2,7 , C
GE
= 330nF, T
vj
= 25°C
t
r
-
450
ns
V
GE
= ±15V, R
G
= 2,7 , C
GE
= 330nF,T
vj
= 125°C
-
450
ns
Abschaltverzgerungszeit (ind. Last)
turn off delay time (inductive load)
I
C
= 1200 A, V
CC
= 1800V
V
GE
= ±15V, R
G
= 2,7 , C
GE
= 330nF, T
vj
= 25°C
t
d,off
-
2500
-
ns
V
GE
= ±15V, R
G
= 2,7 , C
GE
= 330nF,T
vj
= 125°C
-
2700
-
ns
Fallzeit (induktive Last)
fall time (inductive load)
I
C
= 1200 A, V
CC
= 1800V
V
GE
= ±15V, R
G
= 2,7 , C
GE
= 330nF, T
vj
= 25°C
t
f
-
220
-
ns
V
GE
= ±15V, R
G
= 2,7 , C
GE
= 330nF,T
vj
= 125°C
-
330
-
ns
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
I
C
= 1200 A, V
CC
= 1800V, V
GE
= 15V
R
G
= 1,2 , C
GE
= 330nF, T
vj
= 125°C, L
S
= 40nH
E
on
-
2700
-
mWs
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
I
C
= 1200 A, V
CC
= 1800V, V
GE
= 15V
R
G
= 2,7 , C
GE
= 330nF, T
vj
= 125°C, L
S
= 40nH
E
off
-
1590
-
mWs
Kurzschluverhalten
SC Data
t
P
10μsec, V
GE
15V
T
Vj
125°C, V
CC
=2500V, V
CEmax
=V
CES
-L
sCE
·dI/dt
I
SC
-
5200
-
A
Modulinduktivitt
stray inductance module
L
sCE
-
10
-
nH
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
T = 25°C
R
CC'+EE'
-
0,12
-
m
Charakteristische Werte / Characteristic values
Diode / Diode
min.
typ.
max.
Durchlaspannung
forward voltage
I
F
= 1200 A, V
GE
= 0V, T
vj
= 25°C
V
F
-
2,60
3,35
V
I
F
= 1200 A, V
GE
= 0V, T
vj
= 125°C
-
2,45
3,30
V
Rückstromspitze
peak reverse recovery current
I
F
= 1200 A, - di
F
/dt = 4900 A/μsec
V
R
= 1800V, VGE = -10V, T
vj
= 25°C
I
RM
-
1180
-
A
V
R
= 1800V, VGE = -10V, T
vj
= 125°C
-
1300
-
A
Sperrverzgerungsladung
recovered charge
I
F
= 1200 A, - di
F
/dt = 4900 A/μsec
V
R
= 1800V, VGE = -10V, T
vj
= 25°C
Q
r
-
650
-
μAs
V
R
= 1800V, VGE = -10V, T
vj
= 125°C
-
1200
-
μAs
Abschaltenergie pro Puls
reverse recovery energy
I
F
= 1200 A, - di
F
/dt = 4900 A/μsec
V
R
= 1800V, VGE = -10V, T
vj
= 25°C
E
rec
-
430
-
mWs
V
R
= 1800V, VGE = -10V, T
vj
= 125°C
-
1150
-
mWs
2 (9)
FZ1200R33KL2_V Rev3.xls
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FZ1200R33KF2C 功能描述:IGBT 晶體管 3300V 1200A SINGLE RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
FZ1200R33KF2C-B5 制造商:EUPEC 制造商全稱:EUPEC 功能描述:IGBT-Wechselrichter / IGBT-inverter
FZ1200R33KL2 制造商:EUPEC 制造商全稱:EUPEC 功能描述:Hochstzulassige Werte / Maximum rated values
FZ1200R33KL2C 功能描述:IGBT 模塊 N-CH 3.3KV 2.3KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
FZ1200R33KL2C_B5 功能描述:IGBT 模塊 N-CH 3.3KV 2.3KA RoHS:否 制造商:Infineon Technologies 產(chǎn)品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝:
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