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參數(shù)資料
| 型號： | FP2189-RFID |
| 英文描述： | 1 - Watt HFET |
| 中文描述： | 1 -瓦特異質(zhì)結(jié)場效應晶體管 |
| 文件頁數(shù)： | 8/13頁 |
| 文件大?。?/td> | 644K |
| 代理商： | FP2189-RFID |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
September 2004
FP2189
1 - Watt HFET
Product Information
FP2189-PCB2140S Application Circuit Performance Plots
S11 vs. Frequency
-30
-25
-20
-15
-10
-5
0
2110
2130
2150
2170
Frequency (MHz)
S
-40c
+25c
+85c
S21 vs. Frequency
11
12
13
14
15
16
2110
2130
2150
2170
Frequency (MHz)
S
-40c
+25c
+85c
S22 vs. Frequency
-30
-25
-20
-15
-10
-5
0
2110
2130
2150
2170
Frequency (MHz)
S
-40c
+25c
+85c
P1dB vs. Frequency
24
26
28
30
32
34
2110
2130
2150
2170
Frequency (MHz)
P
-40C
+25C
+85C
Noise Figure vs. Frequency
0
2110
1
2
3
4
5
6
2130
2150
2170
Frequency (MHz)
N
-40C
+25C
+85C
3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset
-60
-55
-50
-45
-40
-35
18
19
20
21
22
23
24
Output Channel Power (dBm)
A
-40 C
+25 C
+85 C
freq = 2140 MHz
OIP3 vs. Temperature
36
38
40
42
44
46
-40
-15
10
35
60
85
Temperature (°C)
O
freq = 2140, 2141 MHz
+15 dBm / tone
IMD products vs. Output Power
fundamental frequency = 2140, 2141 MHz; Temp = +25° C
-100
-80
-60
-40
-20
0
4
8
12
16
20
24
Output Power (dBm)
I
IMD_Low
IMD_High
OIP3 vs. Output Power
fundamental frequency = 2140, 2141 MHz; Temp = +25° C
30
35
40
45
50
0
4
8
12
16
20
24
Output Power (dBm)
O
Output Power / Gain vs. Input Power
frequency = 2140 MHz, Temp = -40° C
6
8
10
12
14
16
2
6
Input Power (dBm)
G
12
16
20
24
28
32
O
Output Power
Gain
Output Power / Gain vs. Input Power
frequency = 2140 MHz, Temp = +25° C
6
8
10
12
14
16
10
14
18
22
Input Power (dBm)
G
12
16
20
24
28
32
O
Output Power
Gain
Output Power / Gain vs. Input Power
frequency = 2140 MHz, Temp = +85° C
6
8
10
12
14
16
2
6
10
14
18
22
Input Power (dBm)
G
12
16
20
24
28
32
O
Output Power
Gain
14 mil GETEK
TM
ML200DSS (e
r
The layout of this circuit can be downloaded from the website.
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