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參數(shù)資料
| 型號： | FP2189-RFID |
| 英文描述： | 1 - Watt HFET |
| 中文描述： | 1 -瓦特異質(zhì)結場效應晶體管 |
| 文件頁數(shù)： | 5/13頁 |
| 文件大?。?/td> | 644K |
| 代理商： | FP2189-RFID |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
September 2004
FP2189
1 - Watt HFET
Product Information
Application Circuit: 1930 – 1990 MHz (FP2189-PCB1900S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I
ds
= 250 mA, 25
°
C
Frequency
MHz
S21 – Gain
dB
S11 – Input Return Loss
dB
S22 – Output Return Loss
dB
Output P1dB
dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing)
Noise Figure
dB
IS-95 Channel Power
@ -45 dBc ACPR
1930
15.6
-15.4
-12
+30.2
1960
15.6
-14.6
-12
+30.4
1990
15.4
-13.2
-12
+30.5
dBm
+43.5
3.4
3.4
3.6
dBm
+23.8
RES
R=
5.1 Ohm
R2
ICAP
C=
2.4 pF
C13
IIND
L=
10 nH
L1
RES
ID=
R=
20 Ohm
R1
ICAP
C=
33 pF
C1
CAP
ID=
C=
2.4 pF
C2
IND
ID=
L=
22 nH
L2
ICAP
C=
33 pF
C7
ICAP
C=
1000 pF
C6
ICAP
C=
10000 pF
C8
ICAP
C=
33 pF
C9
CAP
ID=
C=
DNP pF
C11
ICAP
C=
DNP pF
C10
CAP
C=
33 pF
C3
ICAP
C=
1000 pF
C4
CAP
ID=
C=
DNP pF
C5
ICAP
C=
DNP pF
C12
ICAP
C=
1.5 pF
C14
1
2
SID=
NET=
"FP2189"
Q1
P1
P=
50 Ohm
Z=
P2
P=
50 Ohm
Z=
-Vgg
Vds=8V @ 250 mA
14 mil GETEK
TM
ML200DSS (e
r
= 4.2)
The main microstrip line has a line impedance of 50 O.
Bill of Materials
Value
100 pF
2.4 pF
1000 pF
0.1
F
1.5 pF
10 nH
22 nH
20 O
5.1 O
FP2189
Ref. Desig.
C1, C3, C7, C9
C2, C13
C4, C6
C8
C14
L1
L2
R1
R2
Q1
C5, C10, C11, C12
Part style
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Chip capacitor
Multilayer chip inductor
Multilayer chip inductor
Chip resistor
Chip resistor
WJ 1W HFET
Do Not Place
Size
0603
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
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