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參數(shù)資料
| 型號： | FP2189-RFID |
| 英文描述： | 1 - Watt HFET |
| 中文描述： | 1 -瓦特異質結場效應晶體管 |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 644K |
| 代理商： | FP2189-RFID |
Specifications and information are subject to change without notice.
WJ Communications, Inc
Phone 1-800-WJ1-4401
FAX: 408-577-6621
e-mail: sales@wj.com
Web site: www.wj.com
September 2004
FP2189
1 - Watt HFET
Product Information
Application Circuit: 2110 – 2170 MHz
(FP2189-PCB2140S)
The application circuit is matched for output power.
Typical RF Performance
Drain Bias = +8 V, I
ds
= 250 mA, 25
°
C
Frequency
MHz
S21 – Gain
dB
S11 – Input Return Loss
dB
S22 – Output Return Loss
dB
Output P1dB
dBm
Output IP3
(+15 dBm / tone, 1 MHz spacing)
Noise Figure
dB
W-CDMA Channel Power
@ -45 dBc ACPR
CAP
ID=
33 pF
2110
14.4
-23
-9.7
+30.5
2140
14.4
-23
-11.5
+30.6
2170
14.4
-22
-12
+30.2
dBm
+43.9
4.2
4.5
4.3
dBm
+22.2
RES
ID=
R=
6.2 Ohm
R2
ICAP
C=
DNP pF
C4
IIND
L=
5.6 nH
L1
RES
ID=
R=
10 Ohm
R1
CAP
ID=
C=
1.8 pF
C1
ICAP
C=
DNP pF
C2
IND
ID=
L=
18 nH
L2
CAP
ID=
C=
1000 pF
C7
ICAP
C=
22 pF
C6
ICAP
C=
10000 pF
C8
CAP
ID=
C=
22 pF
C9
CAP
C=
DNP pF
C5
CAP
ID=
C=
1.8 pF
C11
CAP
ID=
C=
1 pF
C10
C=
C3
1
2
SID=
NET=
"FP2189"
Q1
PORT
P=
50 Ohm
Z=
1
PORT
P=
50 Ohm
Z=
2
-Vgg
Vds=8V @ 250 mA
14 mil GETEK
TM
ML200DSS (e
r
= 4.2)
The main microstrip line has a line impedance of 50 O.
Bill of Materials
Part style
Chip capacitor
Chip capacitor
Chip capacitor
1000 pF
0.1
μ
F
1.0 pF
5.6 nH
Multilayer chip inductor
18 nH
Multilayer chip inductor
10 O
Chip resistor
6.2 O
Chip resistor
FP2189
WJ 1W HFET
Do Not Place
Ref. Desig.
C1, C11
C3
C6, C9
C7
C8
C10
L1
L2
R1
R2
Q1
C2, C4, C5
Value
1.8 pF
33 pF
22 pF
Size
0603
0805
0603
0603
1206
0603
0603
0603
0603
0603
SOT-89
Chip capacitor
Chip capacitor
Chip capacitor
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