參數(shù)資料
型號: FGH40N6S2
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: IGBT 晶體管
英文描述: 600V, SMPS II Series N-Channel IGBT
中文描述: 75 A, 600 V, N-CHANNEL IGBT, TO-247
封裝: TO-247, 3 PIN
文件頁數(shù): 4/8頁
文件大小: 176K
代理商: FGH40N6S2
2003 Fairchild Semiconductor Corporation
FGH40N6S2 / FGP40N6S2 / FGB40N6S2 RevA5
F
Figure 7. Turn-On Energy Loss vs Collector to
Emitter Current
Figure 8. Turn-Off Energy Loss vs Collector to
Emitter Current
Figure 9. Turn-On Delay Time vs Collector to
Emitter Current
Figure 10. Turn-On Rise Time vs Collector to
Emitter Current
Figure 11. Turn-Off Delay Time vs Collector to
Emitter Current
Figure 12. Fall Time vs Collector to Emitter
Current
Typical Performance Curves
T
J
= 25
°
C unless otherwise noted
E
O
,
μ
J
600
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
400
800
0
10
20
25
30
35
40
0
1200
1000
200
1400
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
5
15
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
E
O
,
μ
J
600
400
800
0
1000
1400
200
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
10
20
25
30
35
40
0
5
15
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
0
4
8
12
16
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 15V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
20
10
20
25
30
35
40
0
5
15
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
r
,
0
30
10
60
50
40
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
= 10V
T
J
= 25
o
C, T
J
= 125
o
C, V
GE
=15V
20
10
20
25
30
35
40
0
5
15
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
40
20
30
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
d
,
70
60
50
V
GE
= 10V, V
GE
= 15V, T
J
= 125
o
C
80
10
20
25
30
35
40
0
5
15
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
V
GE
= 10V, V
GE
= 15V, T
J
= 25
o
C
I
CE
, COLLECTOR TO EMITTER CURRENT (A)
t
f
,
T
J
= 25
o
C, V
GE
= 10V, V
GE
= 15V
T
J
= 125
o
C, V
GE
= 10V, V
GE
= 15V
10
20
25
30
35
40
0
5
15
R
G
= 3
, L = 200
μ
H, V
CE
= 390V
60
40
50
90
80
70
100
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