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參數(shù)資料
| 型號： | FGB30N6S2D |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | IGBT 晶體管 |
| 英文描述： | 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode |
| 中文描述： | 45 A, 600 V, N-CHANNEL IGBT, TO-263AB |
| 封裝： | PLASTIC, D2PAK-3 |
| 文件頁數(shù)： | 11/12頁 |
| 文件大小： | 281K |
| 代理商： | FGB30N6S2D |
2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A
F
TO-263AB
SURFACE MOUNT JEDEC TO-263AB PLASTIC PACKAGE
TO263AB
24mm TAPE AND REEL
MINIMUM PAD SIZE RECOMMENDED FOR
SURFACE-MOUNTED APPLICATIONS
E
A
1
A
H
1
D
L
b
e
e1
L
2
b
1
L
1
c
TERM. 4
1
3
1
3
L
3
b
2
TERM. 4
0.450
(11.43)
0.350
(8.89)
0.150
(3.81)
0.080 TYP (2.03)
0.062 TYP (1.58)
0.700
(17.78)
J
1
SYMBOL
A
A
1
b
b
1
b
2
c
D
E
e
e
1
H
1
J
1
L
L
1
L
2
L
3
NOTES:
1. These dimensions are within allowable dimensions of Rev.
C of JEDEC TO-263AB outline dated 2-92.
2. L
and b
dimensions established a minimum mounting
surface for terminal 4.
3. Solder finish uncontrolled in this area.
4. Dimension (without solder).
5. Add typically 0.002 inches (0.05mm) for solder plating.
6. L
is the terminal length for soldering.
7. Position of lead to be measured 0.120 inches (3.05mm) from
bottom of dimension D.
8. Controlling dimension: Inch.
9. Revision 10 dated 5-99.
INCHES
MIN
0.170
0.048
0.030
0.045
0.310
0.018
0.405
0.395
0.100 TYP
0.200 BSC
0.045
0.095
0.175
0.090
0.050
0.315
MILLIMETERS
MIN
4.32
1.22
0.77
1.15
7.88
0.46
10.29
10.04
2.54 TYP
5.08 BSC
1.15
2.42
4.45
2.29
1.27
8.01
NOTES
-
4, 5
4, 5
4, 5
2
4, 5
-
-
7
7
-
-
-
4, 6
3
2
MAX
0.180
0.052
0.034
0.055
-
0.022
0.425
0.405
MAX
4.57
1.32
0.86
1.39
-
0.55
10.79
10.28
0.055
0.105
0.195
0.110
0.070
-
1.39
2.66
4.95
2.79
1.77
-
2.0mm
4.0mm
1.75mm
1.5mm
DIA. HOLE
C
USER DIRECTION OF FEED
16mm
24mm
COVER TAPE
330mm
100mm
13mm
30.4mm
24.4mm
GENERAL INFORMATION
1. 800 PIECES PER REEL.
2. ORDER IN MULTIPLES OF FULL REELS ONLY.
3. MEETS EIA-481 REVISION "A" SPECIFICATIONS.
ACCESS HOLE
40mm MIN.
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| FGB30N6S2DT | 功能描述:IGBT 晶體管 600V N-Ch IGBT SMPS II Series RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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| FGB3236 | 制造商:Rochester Electronics LLC 功能描述: 制造商:Fairchild Semiconductor Corporation 功能描述: |
| FGB3236_F085 | 功能描述:IGBT 晶體管 320MJ 360V N-CH IGNITION IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| FGB40N60SM | 功能描述:IGBT 晶體管 600V 40A FIELD STOP PLANAR IGBT GEN2 RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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