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參數(shù)資料
| 型號(hào)： | FDZ291P |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | P-Channel 1.5 V Specified PowerTrench BGA MOSFET |
| 中文描述： | 4.6 A, 20 V, 0.04 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-9 |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 170K |
| 代理商： | FDZ291P |
FDZ291P Rev. C1 (W)
E
lectrical Characteristics
T
A
= 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ Max Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Gate–Body Leakage.
V
GS
= 0 V,
I
D
= –250
μ
A, Referenced to 25
°
C
V
DS
= –16 V,
V
GS
= 0 V
V
GS
=
±
8 V,
V
DS
= 0 V
I
D
= –250
μ
A
–20
V
–12
mV/
°
C
μ
A
nA
–1
±
100
On Characteristics
V
GS(th)
V
GS(th)
T
J
R
DS(on)
(Note 2)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –4.5 V, I
D
= –4.6 A
V
GS
= –2.5 V, I
D
= –3.6 A
V
GS
= –1.5 V, I
D
= –1.0 A
V
GS
= –4.5 V, I
D
= –4.6 A, T
J
=125
°
C
V
GS
= –4.5 V,
V
DS
= –5 V
V
DS
= –5 V,
I
D
= –4.6 A
I
D
= –250
μ
A
–0.4
–0.7
2
31
43
85
42
16
–1.0
V
mV/
°
C
m
40
60
160
55
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
–10
A
S
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
1010
160
80
pF
pF
pF
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
11
9
36
16
9
1.6
1.9
19
18
58
29
13
ns
ns
ns
ns
nC
nC
nC
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –10V,
V
GS
= –4.5 V
I
D
= –4.6 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
–1.4
A
V
SD
V
GS
= 0V, I
S
= –1.4 A
(Note 2)
–0.7
–1.2
V
17
5
ns
nC
I
F
= –4.6 A, dI
F
/dt = 100A/μs
Notes:
1.
R
is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to
the circuit board side of the solder ball, R
θ
JB
, is defined for reference. For R
θ
JC
, the thermal reference point for the case is defined as the top surface of the
copper chip carrier. R
θ
JC
and R
θ
JB
are guaranteed by design while R
θ
JA
is determined by the user's board design.
a)
72°C/W when
mounted on a 1in
2
pad
of 2 oz copper, 1.5” x
1.5” x 0.062” thick
PCB
b)
157°C/W when mounted
on a minimum pad of 2 oz
copper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDZ294P | 制造商:Fairchild Semiconductor Corporation 功能描述: |
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