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參數(shù)資料
| 型號： | FDZ2551N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrenchTM BGA MOSFET |
| 中文描述： | 9 A, 20 V, 0.018 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ULTRA THIN, BGA-18 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 52K |
| 代理商： | FDZ2551N |
FDZ2551N Rev A(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
BV
DSS
===
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage Current,
Forward
I
GSSR
Gate–Body Leakage Current,
Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= 0 V, I
D
= 250
μ
A
I
D
= 250
μ
A,Referenced to 25
°
C
20
V
Breakdown Voltage Temperature
14
mV/
°
C
V
DS
= 16 V,
V
GS
= 12 V,
V
GS
= 0 V
V
DS
= 0 V
1
μ
A
nA
100
V
GS
= –12 V
V
DS
= 0 V
–100
nA
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
V
GS
= 4.5 V,
V
GS
= 2.5 V,
0.4
0.9
1.5
0.018
0.030
V
I
D
= 9 A
I
D
= 7 A
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
2.5
1.2
A
V
V
GS
= 0 V,
I
S
= 2.5 A
(Note 2)
0.77
Notes:
1.
R
JA
is a function of the junction-to-case (R
JC
), case-to-ambient (R
CA
) and the PC Board (R
BA
) thermal resistance. For the purpose of determining R
θ
JC
the case thermal reference is defined as the top surface of the package. R
θ
JC
is guaranteed by design while R
θ
CA
and R
θ
BA
are determined by the user's
design. Maximum current ratings assume single device operation.
(a).
R
θ
JA
= 50
°
C/W (steady-state) when mounted on 1 in
2
of 2 oz. copper.
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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| FDZ2552P | 功能描述:MOSFET 20V/12V NCh MOSFET Common Drain RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553N | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553N_Q | 功能描述:MOSFET 20V/12V NCh MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553NZ | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDZ2553NZ_Q | 功能描述:MOSFET 20V/12V NCh Monolith Common Drain BGa RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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