參數(shù)資料
型號(hào)： FDZ208P
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： P-Channel 30 Volt PowerTrench
中文描述： 12.5 A, 30 V, 0.0105 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝： ULTRA THIN, BGA-30
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 185K
代理商： FDZ208P
FDZ208P Rev C3 (W)
Electrical Characteristics
Symbol
T
A
= 25°C unless otherwise noted
Test Conditions
Parameter
Min
Typ Max Units
Off Characteristics
BV
DSS
Drain
–Source Breakdown Voltage
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage Current,
Forward
I
GSSR
Gate–Body Leakage Current,
Reverse
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
g
FS
Forward Transconductance
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
Switching Characteristics
(Note 2)
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
Drain
–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain
–Source Diode Forward Current
V
SD
Drain–Source Diode Forward
Voltage
t
rr
Diode Reverse Recovery Time
Q
rr
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
D
= –250
μ
A, Referenced to 25
°
C
I
D
= –250
μ
A
–30
V
Breakdown Voltage Temperature
–20
mV/
°
C
V
DS
= –24 V,
V
GS
= –25 V,
V
GS
= 0 V
V
DS
= 0 V
–1
–100
μ
A
nA
V
GS
= 25 V,
V
DS
= 0 V
100
nA
(Note 2)
V
DS
= V
GS
,
I
D
= –250
μ
A, Referenced to 25
°
C
V
GS
= –10 V, I
D
= –12.5 A
V
GS
= –4.5 V, I
= –9.5 A
V
GS
= –10 V,I
D
= –12.5A,T
J
=125
°
C
V
DS
= –10 V, I
D
= –12.5 A
I
D
= –250
μ
A
–1
–1.5
5
–3
V
Gate Threshold Voltage
mV/
°
C
9
13
11.7
40
10.5
16.5
15
m
S
2409
614
300
pF
pF
pF
V
= –15 V, V
GS
= 0 V,
f = 1.0 MHz
13
11
74
42
25
5
10
24
21
119
68
35
ns
ns
ns
ns
nC
nC
nC
V
DD
= –15 V,
V
GS
= –10 V,
I
D
= –1 A,
R
GEN
= 6
V
DS
= –15 V, I
D
= –12.5 A,
V
GS
= –5 V
–1.8
–1.2
A
V
V
GS
= 0 V,
I
S
= –1.8 A
(Note 2)
–0.7
29.5
30.2
nS
nC
I
F
= 12.5 A,
d
iF
/d
t
= 100 A/μs
Notes: 1.
junction to the circuit board side of the solder ball, R
θ
JB
, is defined for reference. For R
θ
JC
, the thermal reference point for the case is defined as the top surface of
the copper chip carrier. R
θ
JC
and R
θ
JB
are guaranteed by design while R
θ
JA
is determined by the user's board design.
R
is determined with the device mounted on a 1 in2 2 oz. copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the
a)
56°C/W when
mounted on a 1in
2
pad
of 2 oz copper
b)
119°C/W when mounted
on a minimum pad of 2 oz
copper
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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