參數(shù)資料
型號： FDW2601NZ_NL
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述： 8.2 A, 30 V, 0.015 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝： LEAD FREE, TSSOP-8
文件頁數(shù)： 9/11頁
文件大?。?/td> 270K
代理商： FDW2601NZ_NL
FDW2601NZ Rev. A
www.fairchildsemi.com
F
9
SABER Electrical Model
REV June 2004
template fdw2601nz n2,n1,n3
electrical n2,n1,n3
{
var i iscl
dp..model dbodymod = (isl = 18.6e-12, nl=0.93, rs = 6.6e-3, trs1 = 1.7e-3, trs2 = 2e-6, xti=0.1, cjo = 5.2e-10, ikf=0.2, tt = 8.7e-9,
m = 0.58, tikf=0.001)
dp..model dbreakmod = (rs = 1e-1, trs1 = 9e-3, trs2 = -2.0e-5)
dp..model dplcapmod = (cjo = 0.76e-9, isl=10e-30, nl=10, m=0.58)
dp..model desd1mod = (bv=10.5, tbv1=-0.0018, nl=9.4, rs=5)
dp..model desd2mod = (bv=10.5, tbv1=-0.0018, nl=9.4, rs=5)
m..model mmedmod = (type=_n, vto = 1.0, kp=1.7, is=1e-30, tox=1)
m..model mstrongmod = (type=_n, vto = 1.27, kp = 147, is = 1e-30, tox = 1)
m..model mweakmod = (type=_n, vto = 0.83, kp = 0.05, is = 1e-30, tox = 1, rs=0.1)
sw_vcsp..model s1amod = (ron = 1e-5, roff = 0.1, von = -6, voff = -1.5)
sw_vcsp..model s1bmod = (ron = 1e-5, roff = 0.1, von = -1.5, voff = -6 )
sw_vcsp..model s2amod = (ron = 1e-5, roff = 0.1, von = -0.5, voff = 0.3)
sw_vcsp..model s2bmod = (ron = 1e-5, roff = 0.1, von = 0.3, voff = -0.5)
c.ca n12 n8 = 19.3e-10
c.cb n15 n14 = 19.3e-10
c.cin n6 n8 = 1.7e-9
dp.dbody n7 n5 = model=dbodymod
dp.dbreak n5 n11 = model=dbreakmod
dp.dplcap n10 n5 = model=dplcapmod
dp.desd1 n91 n9 = model=desd1mod
dp.desd2 n91 n7 = model=desd2mod
spe.ebreak n11 n7 n17 n18 = 33.3
spe.eds n14 n8 n5 n8 = 1
spe.egs n13 n8 n6 n8 = 1
spe.esg n6 n10 n6 n8 = 1
spe.evtemp n20 n6 n18 n22 = 1
spe.evthres n6 n21 n19 n8 = 1
i.it n8 n17 = 1
l.ldrain n2 n5 = 1e-9
l.lgate n1 n9 = 0.96e-9
l.lsource n3 n7 = 0.19e-9
res.rldrain n2 n5 = 10
res.rlgate n1 n9 = 9.6
res.rlsource n3 n7 = 1.9
m.mmed n16 n6 n8 n8 = model=mmedmod, l=1u, w=1u
m.mstrong n16 n6 n8 n8 = model=mstrongmod, l=1u, w=1u
m.mweak n16 n21 n8 n8 = model=mweakmod, l=1u, w=1u
res.rbreak n17 n18 = 1, tc1 = 8.8e-4, tc2 = -13e-7
res.rdrain n50 n16 = 8.8e-3, tc1 = 1e-9, tc2 = 1e-5
res.rgate n9 n20 = 2.75
res.rslc1 n5 n51= 1e-6, tc1 = 2e-9, tc2 =5e-8
res.rslc2 n5 n50 = 1e3
res.rsource n8 n7 = 3e-4, tc1 = 8.2e-2, tc2 =1e-6
res.rvtemp n18 n19 = 1, tc1 = -1.3e-3, tc2 = 1e-6
res.rvthres n22 n8 = 1, tc1 = -13e-4, tc2 = -2.8e-6
sw_vcsp.s1a n6 n12 n13 n8 = model=s1amod
sw_vcsp.s1b n13 n12 n13 n8 = model=s1bmod
sw_vcsp.s2a n6 n15 n14 n13 = model=s2amod
sw_vcsp.s2b n13 n15 n14 n13 = model=s2bmod
v.vbat n22 n19 = dc=1
equations {
i (n51->n50) +=iscl
iscl: v(n51,n50) = ((v(n5,n51)/(1e-9+abs(v(n5,n51))))*((abs(v(n5,n51)*1e6/120))** 2.5))
}
}
18
22
+
-
6
8
+
-
19
8
+
-
17
18
-
6
8
+
-
5
8
+
-
RBREAK
RVTEMP
19
VBAT
RVTHRES
IT
17
18
22
12
13
15
S1A
S1B
S2A
S2B
CA
CB
EGS
EDS
14
8
13
8
14
13
MWEAK
EBREAK
DBODY
RSOURCE
SOURCE
3
11
7
LSOURCE
RLSOURCE
CIN
RDRAIN
EVTHRES
16
21
8
MMED
MSTRO
D2
LDRAIN
RLDRAIN
DBREAK
DPLCAP
ISCL
RSLC1
51
10
5
50
RSLC2
G1
RGATE
EVTEMP
9
ESG
LGATE
RLGATE
20
+
-
+
6
DESD1
91
DESD2
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FDW2601NZ Dual N-Channel 2.5V Specified PowerTrench MOSFET
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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FDW262P_Q 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW264P 功能描述:MOSFET P-Ch 2.5V Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FD-W44 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER
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