- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄375787 > FDW2601NZ_NL (FAIRCHILD SEMICONDUCTOR CORP) Dual N-Channel 2.5V Specified PowerTrench MOSFET PDF資料下載
參數(shù)資料
| 型號： | FDW2601NZ_NL |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| 中文描述： | 8.2 A, 30 V, 0.015 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, TSSOP-8 |
| 文件頁數(shù)： | 5/11頁 |
| 文件大小： | 270K |
| 代理商： | FDW2601NZ_NL |
FDW2601NZ Rev. A
www.fairchildsemi.com
F
5
Figure 5. Forward Bias Safe Operating Area
Figure 6. Transfer Characteristics
Figure 7. Saturation Characteristics
Figure 8. Drain to Source On Resistance vs Gate
Voltage and Drain Current
Figure 9. Normalized Drain to Source On
Resistance vs Junction Temperature
Figure 10. Normalized Gate Threshold Voltage vs
Junction Temperature
Typical Characteristic
(Continued)
T
A
= 25
°
C unless otherwise noted
1
10
100
0.1
1
10
40
0.5
300
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
T
J
= MAX RATED
T
A
= 25
C
SINGLE PULSE
LIMIAREA MAY BE
DS(ON)
OPERATION IN THIS
100
μ
s
10ms
1ms
0
20
40
60
1.0
1.5
2.0
2.5
I
D
,
V
GS
, GATE TO SOURCE VOLTAGE (V)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
DD
= 10V
T
J
= 150
o
C
T
J
= 25
o
C
T
J
= -55
o
C
0
20
40
60
0
0.5
1.0
1.5
I
D
,
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 2.5V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= 1.8V
T
A
= 25
o
C
V
GS
= 4.5V
V
GS
= 10V
0
15
30
45
1
2
3
4
5
I
D
= 1A
V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= 8.2A
r
D
,
O
)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
O
V
GS
= 4.5V, I
D
= 8.2A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
0.50
0.75
1.00
1.25
-80
-40
0
40
80
120
160
N
T
J
, JUNCTION TEMPERATURE (
o
C)
V
GS
= V
DS
, I
D
= 250
μ
A
T
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| FDW2601NZ | Dual N-Channel 2.5V Specified PowerTrench MOSFET |
| FDW262P | 20V P-Channel PowerTrench MOSFET |
| FDW264P | P-Channel 2.5V Specified PowerTrench MOSFET |
| FDW6923 | P-Channel 2.5V Specified PowerTrench MOSFET with Schottky Diode |
| FDW9926NZ | Common Drain N-Channel 2.5V specified PowerTrench MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDW262P | 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW262P_Q | 功能描述:MOSFET 20V PCh MOSFET Power Trench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDW264P | 功能描述:MOSFET P-Ch 2.5V Spec PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FD-W44 | 制造商:Panasonic Electric Works 功能描述:THRU-BEAM TYPE FIBER |
| FDW6923 | 功能描述:MOSFET P-Ch 2.5V Clock Multiplier RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。