參數(shù)資料
型號: FDW2511NZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Dual N-Channel 2.5V Specified PowerTrench MOSFET
中文描述: 7.1 A, 20 V, 0.02 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: TSSOP-8
文件頁數(shù): 1/11頁
文件大小: 267K
代理商: FDW2511NZ
2004 Fairchild Semiconductor Corporation
FDW2511NZ Rev. A
December 2004
www.fairchildsemi.com
F
D
1
FDW2511NZ
Dual N-Channel 2.5V Specified PowerTrench
MOSFET
Features
!
7.1A, 20V r
DS(ON)
=0.020
,
V
GS
= 4.5V
r
DS(ON)
=0.025
,
V
GS
= 2.5V
!
Extended
V
GS
range (
±
12 V) for battery applications
!
HBM ESD Protection Level of 3.5kV Typical (note 3)
!
High performance trench technology for extremely low
r
DS(ON)
!
Low profile TSSOP-8 package
Applications
!
Load switch
!
Battery charge
!
Battery disconnect circuits
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that has
been especially tailored to minimize the on-state resistance
and yet maintain low gate charge for superior switching
performance. These devices are well suited for portable
electronics applications.
TSSOP-8
D1
G1
S1
D2
G2
S2
S2
D2
G2
S2
G1
S1
S1
D1
Pin 1
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相關代理商/技術參數(shù)
參數(shù)描述
FDW2511NZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench㈢ MOSFET
FDW2512NZ 功能描述:MOSFET 2.5V TSSOP8 DUAL NCH SPECIFIED TRENCH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDW2512NZ_08 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
FDW2512NZ_NL 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET
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