參數(shù)資料
型號: FDW2516NZ
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: Common Drain N-Channel 2.5V specified PowerTrench MOSFET
中文描述: 5.8 A, 20 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
封裝: TSSOP-8
文件頁數(shù): 1/5頁
文件大?。?/td> 135K
代理商: FDW2516NZ
March 2003
2003 Fairchild Semiconductor Corporation
FDW2516NZ Rev B
FDW2516NZ
Common Drain N-Channel 2.5V specified PowerTrench
ò
MOSFET
General Description
This dual N-Channel MOSFET has been designed
using
Fairchild
Semiconductor’s
PowerTrench process to optimize the R
@ V
=
2.5v on special TSSOP-8 lead frame with all the drains
on one side of the package.
advanced
Applications
Li-Ion Battery Pack
Features
5.8 A, 20 V
R
DS(ON)
= 30 m
@ V
GS
= 4.5 V
R
DS(ON)
= 40 m
@ V
GS
= 2.5 V
Isolated source and drain pins
ESD protection diode (note 3)
High performance trench technology for extremely
low R
DS(ON)
@ V
GS
= 2.5 V
Low profile TSSOP-8 package
S1
G1
S2
G2
D
D
D
D
TSSOP-8
Pin 1
5
4
6
3
7
2
8
1
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current
– Continuous
– Pulsed
Power Dissipation for Single Operation
P
D
Ratings
20
±
12
5.8
20
1.6
1.1
–55 to +150
Units
V
V
A
(Note 1a)
(Note 1a)
(Note 1b)
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
(Note 1a)
77
114
°
C/W
°
C/W
(Note 1b)
Package Marking and Ordering Information
Device Marking
Device
2516NZ
FDW2516NZ
Reel Size
13’’
Tape width
12mm
Quantity
3000 units
F
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