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參數(shù)資料
| 型號： | FDU6612A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 9.5 A, 30 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA |
| 封裝： | IPAK-3 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 122K |
| 代理商： | FDU6612A |
FDD6612A/FDU6612A Rev. E(W)
Typical Characteristics
0
10
20
30
40
50
60
0
1
2
3
4
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
I
D
,
V
GS
= 10V
4.5V
3.5V
3.0V
6.0V
4.0V
5.0V
0.8
1
1.2
1.4
1.6
1.8
2
0
10
20
30
40
I
D
, DRAIN CURRENT (A)
R
D
,
D
V
GS
= 3.5V
4.5V
5.0V
10V
4.0V
6.0V
Figure 1. On-Region Characteristics
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage
0.6
0.8
1
1.2
1.4
1.6
1.8
-50
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
D
,
I
D
= 9.5A
V
GS
= 10V
0.01
0.02
0.03
0.04
0.05
0.06
2
4
8
10
V
GS
, GATE TO SO6
R
D
,
I
D
= 5 A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation
withTemperature
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage
0
10
20
30
40
50
60
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
3
3.5
4
4.5
5
5.5
I
D
,
T
A
= 125
o
C
-55
o
C
25
o
C
V
DS
= 5V
0.0001
0.001
0.01
0.1
1
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
I
S
,
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDU6612A_Q | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU6644 | 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU6670AS | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU6676AS | 功能描述:MOSFET 30V N-Channel PowerTrench SyncFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDU6676AS_08 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:N-Channel PowerTrench SyncFET |
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