參數(shù)資料
型號(hào)： FDD6612
廠商： Fairchild Semiconductor Corporation
英文描述： N-Channel, Logic Level, PowerTrench⑩ MOSFET
中文描述： N溝道，邏輯層次，⑩的PowerTrench MOSFET的
文件頁(yè)數(shù)： 1/6頁(yè)
文件大?。?/td> 122K
代理商： FDD6612
February 2004
2004 Fairchild Semiconductor Corporation
FDD6612A/FDU6612A Rev E(W)
FDD6612A/FDU6612A
30V N-Channel PowerTrench
ò
MOSFET
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized for
low gate charge, low R
DS( ON)
, fast switching speed and
extremely low R
DS(ON)
in a small package.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Motor Drives
Features
30 A, 30 V
R
DS(ON)
= 20 m
@ V
GS
= 10 V
R
DS(ON)
= 28 m
@ V
GS
= 4.5 V
Low gate charge
Fast Switching
High performance trench technology for extremely
low R
DS(ON)
G
S
D
D-PAK
(TO-252)
G D S
I-PAK
(TO-251AA)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Continuous Drain Current @T
C
=25°C
Ratings
30
±
20
30
9.5
60
36
2.8
1.3
–55 to +175
Units
V
V
A
(Note 3)
@T
A
=25°C
Pulsed
@T
C
=25°C
@T
A
=25°C
@T
A
=25°C
(Note 1a)
(Note 1a)
Power Dissipation
(Note 1)
(Note 1a)
(Note 1b)
P
D
W
T
J
, T
STG
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JC
Thermal Resistance, Junction-to-Case
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JA
Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
FDD6612A
FDD6612A
FDU6612A
FDU6612A
(Note 1)
3.9
45
96
°
C/W
°
C/W
°
C/W
(Note 1a)
(Note 1b)
Package
D-PAK (TO-252)
I-PAK (TO-251)
Reel Size
13’’
Tube
Tape width
12mm
N/A
Quantity
2500 units
75
F
相關(guān)PDF資料
PDF描述
FDD6630A N-Channel PowerTrench⑩ MOSFET
FDD6632 N-Channel Logic Level UltraFET Trench Power MOSFET 30V, 9A, 90mз
FDD6635 35V N-Channel PowerTrench MOSFET
FDD6637_06 35V P-Channel PowerTrench MOSFET
FDD6637 35V P-Channel PowerTrench-R MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDD6612A 功能描述:MOSFET 30V N-Ch PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDD6612A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 30V 30A DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 30V, 30A, DPAK; Transistor Polarity:N Channel; Continuous Drain Current Id:9.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):20mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2V; No. of Pins:3 ;RoHS Compliant: Yes
FDD6612A 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET TRANSISTOR ROHS COMPLIANT:NO 制造商:Fairchild Semiconductor Corporation 功能描述:N CHANNEL MOSFET, 30V, 30A, TO-252
FDD6612A_F054 制造商:Fairchild Semiconductor Corporation 功能描述:DPAK, SINGLE, NCH - Tape and Reel
FDD6612A_OLDDI 制造商:Fairchild 功能描述:DPAK, SINGLE, NCH
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