參數(shù)資料
型號: FDT461N
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: JFETs
英文描述: N-Channel Logic Level PowerTrench MOSFET
中文描述: 0.54 A, 100 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: SOT-223, 4 PIN
文件頁數(shù): 5/10頁
文件大?。?/td> 267K
代理商: FDT461N
2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
F
Figure 11. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
Figure 12. Capacitance vs Drain to Source
Voltage
Figure 13. Gate Charge Waveforms for Constant Gate Current
Typical Characteristics
T
A
= 25°C unless otherwise noted
0.9
1.0
1.1
-80
-40
0
40
80
120
160
1.2
T
J
, JUNCTION TEMPERATURE (
o
C)
N
I
D
= 250
μ
A
B
1
10
100
0.1
1
10
100
200
C
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
V
GS
= 0V, f = 1MHz
C
ISS
=
C
GS
+ C
GD
C
OSS
C
DS
+ C
GD
C
RSS
=
C
GD
0
2
4
6
8
10
0
0.5
1.0
1.5
2.0
2.5
V
G
,
Q
g
, GATE CHARGE (nC)
V
DD
= 50V
I
D
= 0.54A
Test Circuits and Waveforms
Figure 14. Unclamped Energy Test Circuit
Figure 15. Unclamped Energy Waveforms
t
P
V
GS
0.01
L
I
AS
+
-
V
DS
V
DD
R
G
DUT
VARY t
P
TO OBTAIN
REQUIRED PEAK I
AS
0V
V
DD
V
DS
BV
DSS
t
P
I
AS
t
AV
0
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