參數(shù)資料
型號(hào)： FDU068AN03L
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： JFETs
英文描述： N-Channel PowerTrench?? MOSFET 30V, 35A, 6.8mз
中文描述： 35 A, 30 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
封裝： IPAK-3
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 298K
代理商： FDU068AN03L
2003 Fairchild Semiconductor Corporation
December 2003
FDD068AN03L / FDU068AN03L Rev. B1
F
FDD068AN03L / FDU068AN03L
N-Channel PowerTrench
MOSFET
30V, 35A, 6.8m
Features
r
DS(ON)
= 5.7m
(Typ.), V
GS
= 4.5V, I
D
= 35A
Q
g(5)
= 24nC (Typ.), V
GS
= 5V
Low Miller Charge
Low Q
RR
Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
Applications
12V Automotive Load Control
Starter / Alternator Systems
Electronic Power Steering Systems
ABS
DC-DC Converters
MOSFET Maximum Ratings
T
C
= 25°C unless otherwise noted
Thermal Characteristics
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
Symbol
V
DSS
V
GS
Parameter
Ratings
30
±
20
Units
V
V
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T
C
< 154
o
C, V
GS
= 10V)
Continuous (T
C
< 150
o
C, V
GS
= 4.5V)
Continuous (T
amb
= 25
o
C, V
GS
= 10V, with R
θ
JA
= 52
o
C/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25
o
C
Operating and Storage Temperature
I
D
35
35
17
A
A
A
A
Figure 4
168
80
0.53
-55 to 175
E
AS
mJ
W
W/
o
C
o
C
P
D
T
J
, T
STG
R
θ
JC
R
θ
JA
R
θ
JA
Thermal Resistance Junction to Case TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, TO-251
Thermal Resistance Junction to Ambient TO-252, 1in
2
copper pad area
1.88
100
52
o
C/W
o
C/W
o
C/W
D
G
S
G D S
I-PAK
(TO-251AA)
G
S
D
D-PAK
(TO-252)
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