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參數(shù)資料
| 型號： | FDT461N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 0.54 A, 100 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 267K |
| 代理商： | FDT461N |
2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
F
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Off Characteristics
B
VDSS
On Characteristics
V
GS(TH)
Dynamic Characteristics
C
ISS
Input Capacitance
C
OSS
Output Capacitance
C
RSS
Reverse Transfer Capacitance
Q
g(TOT)
Total Gate Charge at 10V
Q
g(4.5)
Total Gate Charge at 4.5V
Q
g(TH)
Threshold Gate Charge
Q
gs
Gate to Source Gate Charge
Q
gs2
Gate Charge Threshold to Plateau
Q
gd
Gate to Drain “Miller” Charge
Switching Characteristics
(V
GS
= 10V)
t
ON
Turn-On Time
t
d(ON)
Turn-On Delay Time
t
r
Rise Time
t
d(OFF)
Turn-Off Delay Time
t
f
Fall Time
t
OFF
Turn-Off Time
Drain-Source Diode Characteristics
Notes:
1:
Starting T
J
= 25°C, L = 67mH, I
AS
= 0.43A.
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Drain to Source Breakdown Voltage
I
D
= 250
μ
A, V
GS
= 0V
V
DS
= 80V
V
GS
= 0V
V
GS
=
±
20V
100
-
-
-
-
-
-
-
-
1
V
I
DSS
Zero Gate Voltage Drain Current
μ
A
T
C
= 125
o
C
250
±
100
I
GSS
Gate to Source Leakage Current
nA
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 250
μ
A
I
D
= 0.54A, V
GS
= 10V
I
D
= 0.4A, V
GS
= 4.5V
I
D
= 0.54A, V
GS
= 10V,
T
J
= 150
o
C
0.8
-
-
-
2
V
r
DS(ON)
Drain to Source On Resistance
1.40
1.45
2.0
2.5
-
2.80
4.0
V
DS
= 25V, V
GS
= 0V,
f = 1MHz
-
-
-
74
11
2.5
2.36
1.27
0.1
0.37
0.27
0.25
-
-
-
pF
pF
pF
nC
nC
nC
nC
nC
nC
V
GS
= 0V to 10V
V
GS
= 0V to 4.5V
V
GS
= 0V to 1V
V
DD
= 50V
I
D
= 0.54A
I
g
= 1.0mA
4.0
2.0
0.15
-
-
-
-
-
-
-
V
DD
= 50V, I
D
= 0.54A
V
GS
= 10V, R
GS
= 120
-
-
-
-
-
-
-
3
6.5
-
-
-
-
113
ns
ns
ns
ns
ns
ns
1.3
63
12
-
V
SD
Source to Drain Diode Voltage
I
SD
= 0.54A
I
SD
= 0.3A
I
SD
= 0.54A, dI
SD
/dt = 100A/
μ
s
I
SD
= 0.54A, dI
SD
/dt = 100A/
μ
s
-
-
-
-
-
-
-
-
1.25
1.0
22
18
V
V
ns
nC
t
rr
Q
RR
Reverse Recovery Time
Reverse Recovered Charge
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