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參數資料
| 型號： | FDT461N |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | N-Channel Logic Level PowerTrench MOSFET |
| 中文描述： | 0.54 A, 100 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SOT-223, 4 PIN |
| 文件頁數： | 3/10頁 |
| 文件大?。?/td> | 267K |
| 代理商： | FDT461N |
2004 Fairchild Semiconductor Corporation
FDT461N Rev. A1
F
Typical Characteristics
T
A
= 25°C unless otherwise noted
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
Figure 2. Maximum Continuous Drain Current vs
Case Temperature
Figure 3. Normalized Maximum Transient Thermal Impedance
Figure 4. Peak Current Capability
T
A
, AMBIENT TEMPERATURE (
o
C)
P
0
0
25
50
75
100
150
0.2
0.4
0.6
0.8
1.0
1.2
125
0
0.2
0.4
25
50
75
100
125
150
0.6
I
D
,
T
A
, CASE TEMPERATURE (
o
C)
V
GS
= 10V
V
GS
= 4.5V
t, RECTANGULAR PULSE DURATION (s)
Z
θ
J
,
T
NOTES:
DUTY FACTOR: D = t
1
/t
PEAK T
J
= P
DM
x Z
θ
JA
x R
θ
JA
+ T
A
P
DM
t
1
t
2
0.2
0.1
0.05
0.02
0.01
0.5
SINGLE PULSE
0.01
0.1
1
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
2
10
-5
I
D
,
t, PULSE WIDTH (s)
T
A
= 25
o
C
FOR TEMPERATURES
ABOVE 25
o
C DERATE PEAK
CURRENT AS FOLLOWS:
I = I
25
150 - T
A
125
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
V
GS
= 4.5V
1
10
0.4
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
3
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