參數(shù)資料
型號(hào)： FDS9945
廠商： FAIRCHILD SEMICONDUCTOR CORP
元件分類： 小信號(hào)晶體管
英文描述： 60V N-Channel PowerTrench MOSFET
中文描述： 3500 mA, 60 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
封裝： LEAD FREE, SO-8
文件頁(yè)數(shù)： 2/5頁(yè)
文件大?。?/td> 73K
代理商： FDS9945
FDS9945 Rev B(W)
Electrical Characteristics
T
A
= 25°C unless otherwise noted
Test Conditions
Symbol
Parameter
Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage V
GS
= 0 V, I
D
= 250
μ
A
BV
DSS
T
J
Coefficient
I
DSS
Zero Gate Voltage Drain Current
I
GSSF
Gate–Body Leakage, Forward
I
GSSR
Gate–Body Leakage, Reverse
60
V
Breakdown Voltage Temperature
I
D
= 250
μ
A, Referenced to 25
°
C
62.5
mV/
°
C
V
DS
= 48 V,
V
GS
= 20 V,
V
GS
= –20 V
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
1
μ
A
nA
nA
100
–100
On Characteristics
V
GS(th)
Gate Threshold Voltage
V
GS(th)
T
J
Temperature Coefficient
R
DS(on)
Static Drain–Source
On–Resistance
(Note 2)
V
DS
= V
GS
, I
D
= 250
μ
A
I
D
= 250
μ
A, Referenced to 25
°
C
V
GS
= 10 V,
I
D
= 3.5 A
V
GS
= 4.5V,
I
D
= 2.5 A
V
GS
= 10 V, I
D
=3.5A, T
J
=125
°
C
V
GS
= 10 V,
= V
DS
=30 V
V
DS
= 5V,
I
D
= 3.5 A
1
2.5
3
V
Gate Threshold Voltage
–6
mV/
°
C
74
103
126
100
200
170
m
I
D(on)
g
FS
On–State Drain Current
Forward Transconductance
10
A
S
8.6
Dynamic Characteristics
C
iss
Input Capacitance
C
oss
Output Capacitance
C
rss
Reverse Transfer Capacitance
420
48
20
pF
pF
pF
V
DS
= 30 V,
f = 1.0 MHz
V
GS
= 0 V,
Switching Characteristics
t
d(on)
Turn–On Delay Time
t
r
Turn–On Rise Time
t
d(off)
Turn–Off Delay Time
t
f
Turn–Off Fall Time
Q
g
Total Gate Charge
Q
gs
Gate–Source Charge
Q
gd
Gate–Drain Charge
(Note 2)
7
4.3
19
3
8
4
2.5
14
8.6
34
6
13
ns
ns
ns
ns
nC
nC
nC
V
DD
= 30 V,
V
GS
= 10 V,
I
D
= 1 A,
R
GEN
= 6
V
DS
= 30 V,
V
GS
= 5 V
I
D
= 3.5 A,
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
2.1
A
V
SD
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
0.8
1.2
V
Notes:
1.
R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θ
JC
is guaranteed by design while R
θ
CA
is determined by the user's board design.
a) 78°/W when
mounted on a 0.5in
2
pad of 2 oz copper
b) 125°/W when
mounted on a 0.02
in
pad of 2 oz
copper
c) 135°/W when mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width < 300
μ
s, Duty Cycle < 2.0%
F
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
FDS9945 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET N CH 60V 3.5A 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET, N CH, 60V, 3.5A, 8SOIC; Transistor Polarity:N Channel; Continuous Drain Current Id:3.5A; Drain Source Voltage Vds:60V; On Resistance Rds(on):100mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; No. of Pins:8;RoHS Compliant: Yes
FDS9945 制造商:Fairchild Semiconductor Corporation 功能描述:DUAL N CHANNEL MOSFET, 60V, SOIC
FDS9945_Q 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
FDS9945-CUT TAPE 制造商:FAIRCHILD 功能描述:FDS9945 Series 60 V 100 mOhm N-Channel PowerTrench Mosfet- SOIC-8
FDS9953A 功能描述:MOSFET SO-8 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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