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參數(shù)資料
| 型號(hào)： | FDT3612 |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | JFETs |
| 英文描述： | 100V N-Channel PowerTrench MOSFET |
| 中文描述： | 3.7 A, 100 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大?。?/td> | 108K |
| 代理商： | FDT3612 |
March 2001
FDT3612
100V N-Channel PowerTrench
MOSFET
2001 Fairchild Semiconductor Corporation
FDT3612 Rev. C1 (W)
General Description
This
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
R
specifications. The result is a MOSFET that is
easy and safer to drive (even at very high frequencies),
and DC/DC power supply designs with higher overall
efficiency.
N-Channel
MOSFET
has
been
designed
Applications
DC/DC converter
Motor driving
Features
3.7 A, 100 V. R
DS(ON)
= 120 m
@ V
GS
= 10 V
R
DS(ON)
= 130 m
@ V
GS
= 6 V
Fast switching speed
Low gate charge (14nC typ)
High performance trench technology for extremely
low R
DS(ON)
High power and current handling capability in a
widely used surface mount package
G
D
S
D
SOT-223
S
G
D
D
G
D
S
SOT-223
*
(J23Z)
S
G
D
Absolute Maximum Ratings
T
A
=25
o
C unless otherwise noted
Symbol
Parameter
V
DSS
Drain-Source Voltage
V
GSS
Gate-Source Voltage
I
D
Drain Current – Continuous
– Pulsed
Maximum Power Dissipation
T
J
, T
STG
Operating and Storage Junction Temperature Range
Ratings
100
±
20
3.7
20
3.0
1.3
1.1
–55 to +150
Units
V
V
A
W
(Note 1a)
(Note 1a)
(Note 1b)
P
D
(Note 1c)
°
C
Thermal Characteristics
R
θ
JA
Thermal Resistance, Junction-to-Ambient
R
θ
JC
Thermal Resistance, Junction-to-Case
(Note 1a)
42
12
°
C/W
°
C/W
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
3612
FDT3612
Reel Size
13’’
Tape width
12mm
Quantity
2500 units
F
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDT3612 | 制造商:Fairchild Semiconductor Corporation 功能描述:Transistor |
| FDT3612_Q | 功能描述:MOSFET 100V NCh PowerTrench RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDT3612_SB82273 | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET |
| FDT3N40TF | 功能描述:MOSFET 400V N-Chan UniFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDT40 | 制造商:Panasonic Electric Works 功能描述:OPTICAL SENSOR FD-T40 |
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