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參數(shù)資料
| 型號(hào)： | FDS9435A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 244K |
| 代理商： | FDS9435A |
Electrical Characteristics
(
T
A
= 25
O
C unless otherwise noted )
Symbol
Parameter
Conditions
Min
Typ
Max
Units
OFF CHARACTERISTICS
BV
DSS
BV
DSS
/
T
J
I
DSS
I
GSSF
I
GSSR
ON CHARACTERISTICS
(Note 2)
Drain-Source Breakdown Voltage
V
GS
= 0 V, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-30
V
Breakdown Voltage Temp. Coefficient
-25
mV/
o
C
Zero Gate Voltage Drain Current
V
DS
= -24 V, V
GS
= 0 V
V
GS
= 20 V, V
DS
= 0 V
V
GS
= -20 V, V
DS
= 0 V
-1
μA
Gate - Body Leakage, Forward
-100
nA
Gate - Body Leakage, Reverse
-100
nA
V
GS(th)
V
GS(th)
/
T
J
R
DS(ON)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= -250 μA
I
D
= -250 μA, Referenced to 25
o
C
-1
-1.5
-3
V
Gate Threshold Voltage Temp. Coefficient
-3.2
mV/
o
C
Static Drain-Source On-Resistance
V
GS
= -10 V, I
D
= -5.3 A
0.035
0.045
T
J
=125°C
0.052
0.072
V
GS
= -4.5 V, I
D
= -4.0 A
V
GS
= -10 V, V
DS
= -5 V
V
DS
= -10 V, I
D
= -4 A
0.059
0.075
I
D(ON)
g
FS
DYNAMIC CHARACTERISTICS
On-State Drain Current
-25
A
Forward Transconductance
9.5
S
C
iss
C
oss
C
rss
SWITCHING CHARACTERISTICS
(Note 2)
Input Capacitance
V
= -15 V, V
GS
= 0 V,
f = 1.0 MHz
730
pF
Output Capacitance
400
pF
Reverse Transfer Capacitance
90
pF
t
D(on)
t
r
Turn - On Delay Time
V
DS
= -10 V, I
D
= -1 A
V
GS
= -10 V , R
GEN
= 6
11
20
ns
Turn - On Rise Time
10
18
t
D(off)
t
f
Q
g
Q
gs
Q
gd
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Turn - Off Delay Time
90
125
Turn - Off Fall Time
55
80
Total Gate Charge
V
DS
= -10 V, I
D
= -4 A,
V
GS
= -10 V
19
27
nC
Gate-Source Charge
3.5
Gate-Drain Charge
3.6
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
-2.1
A
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= -2.1 A
(Note 2)
-0.77
-1.2
V
Notes:
1. R
θ
JA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. R
θ
JC
is
guaranteed by design while R
θ
CA
is determined by the user's board design.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
FDS9435A Rev.C
c. 125
O
C/W on a 0.006 in
2
pad
of 2oz copper.
b. 105
O
C/W on a 0.04 in
2
pad of 2oz copper.
a. 50
O
C/W on a 1 in
2
pad
of 2oz copper.
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| FDS9435A_Q | 功能描述:MOSFET SO-8 SGL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDS9926A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
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