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參數(shù)資料
| 型號(hào)： | FDS9435A |
| 廠商： | FAIRCHILD SEMICONDUCTOR CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | Single P-Channel Enhancement Mode Field Effect Transistor |
| 中文描述： | 5300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, SO-8 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 244K |
| 代理商： | FDS9435A |
May 1999
FDS9435A
Single P-Channel Enhancement Mode Field Effect Transistor
GeneralDescription Features
Absolute Maximum Ratings
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
FDS9435A
Units
V
DSS
V
GSS
I
D
Drain-Source Voltage
-30
V
Gate-Source Voltage
-20
V
Drain Current - Continuous
(Note 1a)
- 5.3
A
- Pulsed
-50
P
D
Maximum Power Dissipation
(Note 1a)
2.5
W
(Note 1b)
1.2
(Note 1c)
1
T
J
,T
STG
Operating and Storage Temperature Range
-55 to 150
°C
THERMAL CHARACTERISTICS
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
(Note 1a)
50
°C/W
Thermal Resistance, Junction-to-Case
(Note 1)
25
°C/W
FDS9435A Rev.C
-5.3 A, -30 V, R
= 0.045
@ V
= -10 V,
R
DS(ON)
= 0.075
@ V
GS
= - 4.5 V.
High density cell design for extremely low R
DS(ON)
.
High power and current handling capability in a widely
used surface mount package.
SOT-23
SuperSOT
TM
-8
SOIC-16
SO-8
SOT-223
SuperSOT
TM
-6
SO-8 P-Channel enhancement mode power field effect
transistors are produced using Fairchild's proprietary, high
cell density, DMOS technology. This very high density
process is especially tailored to minimize on-state resistance
and provide superior switching performance. These devices
are particularly suited for low voltage applications such as
notebook computer power management and other battery
powered circuits where fast switching, low in-line power loss,
and resistance to transients are needed.
S
D
S
S
SO-8
D
FDS
9435A
D
D
G
pin
1
5
6
8
3
1
7
4
2
1999 Fairchild Semiconductor Corporation
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| FDS9435A_Q | 功能描述:MOSFET SO-8 SGL P-CH -30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| FDS9926A | 功能描述:MOSFET SO-8 SGL N-CH 2.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| FDS9926A | 制造商:Fairchild Semiconductor Corporation 功能描述:MOSFET DUAL NN SO-8 |
| FDS9926A_03 | 制造商:FAIRCHILD 制造商全稱:Fairchild Semiconductor 功能描述:Dual N-Channel 2.5V Specified PowerTrench MOSFET |
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